FET, MOSFET Arrays NTHD3102CT1G product image

NTHD3102CT1G

$1.35
  • Description:MOSFET N/P-CH 20V 4A CHIPFET
  • Series:-

SKU:d3fd789871fd Category: Brand:

  
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NTHD3102CT1G is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N/P-CH 20V 4A CHIPFET. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for NTHD3102CT1G

  • Description:MOSFET N/P-CH 20V 4A CHIPFET
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:N and P-Channel
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):20V
  • Current - Continuous Drain (Id) @ 25°C:4A, 3.1A
  • Rds On (Max) @ Id, Vgs:45mOhm @ 4.4A, 4.5V
  • Vgs(th) (Max) @ Id:1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:7.9nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds:510pF @ 10V
  • Power - Max:1.1W
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-SMD, Flat Leads
  • Supplier Device Package:ChipFET™
  • Grade:-
  • Qualification:-

FET, MOSFET Arrays datasheet and documents for NTHD3102CT1G

NTHD3102CT1G

FET, MOSFET Arrays Overview

The NTHD3102CT1G is a complementary dual MOSFET array manufactured by onsemi, integrating one N-channel and one P-channel enhancement-mode transistor within an 8-lead ChipFET package. The device supports a drain-source voltage of 20V with continuous current ratings of 4A for the N-channel and 3.1A for the P-channel at 25°C. Key electrical parameters include a maximum Rds(on) of 45mΩ at Vgs=4.5V and a gate charge of 7.9nC. It operates across a junction temperature range of -55°C to +150°C with a power dissipation of 1.1W.

FET, MOSFET Arrays Feature Summary

  • Complementary N/P-channel configuration in a single surface-mount package
  • Logic-level gate drive capability for efficient switching control
  • High thermal stability with extended operating temperature range

FET, MOSFET Arrays Applications

  • DC/DC converter synchronous rectification stages
  • Low-voltage load switch circuits
  • Battery protection and management systems

FET, MOSFET Arrays Procurement Notes

Verify component authenticity through authorized distribution channels or direct manufacturer verification. Confirm RoHS compliance status and check for Product Change Notices (PCN) regarding material updates. Review Moisture Sensitivity Level (MSL) handling requirements prior to assembly to ensure reliability during soldering processes.

FET, MOSFET Arrays Selection Notes

Select this component for applications requiring compact complementary switching solutions with low on-resistance. Ensure the design accommodates the 20V voltage rating and 1.1W power dissipation limits. Verify that the logic-level gate threshold aligns with the system's available drive voltage for optimal performance.

FET, MOSFET Arrays Part Context

This part belongs to the NTHD3102C series of complementary MOSFET arrays from onsemi. It is designed for space-constrained designs where dual polarity switching is required. The ChipFET package provides a compact footprint suitable for high-density PCB layouts compared to discrete component arrangements.

FET, MOSFET Arrays Replacement Considerations

Check for pin-compatible alternatives within the same ChipFET-8 family. Verify that substitute parts match the 20V rating and comparable Rds(on) specifications. Ensure thermal characteristics and gate charge values are compatible with existing circuit designs.

NTHD3102CT1GNTHD3102CT1G
$1.35
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