NTHD4401PT1G

FET, MOSFET Arrays Overview

The NTHD4401PT1G is a dual P-channel enhancement mode MOSFET array manufactured by onsemi in the ChipFET 8-SMD package. It features a drain-source voltage (Vdss) of 20V and a continuous drain current (Id) of 2.1A at 25°C. The device has a maximum power dissipation of 1.1W and operates within a junction temperature range of -55°C to 150°C. Key electrical parameters include a gate threshold voltage (Vgs(th)) of 1.2V max at 250µA, a gate charge (Qg) of 6nC max at 4.5V, an input capacitance (Ciss) of 300pF max at 10V, and an on-resistance (Rds(on)) of 155mΩ max at 4.5V with 2.1A current.

FET, MOSFET Arrays Feature Summary

• Dual P-Channel Configuration: Integrates two independent P-channel MOSFETs in a single compact surface-mount package for space-constrained designs.
• Logic Level Gate Drive: Optimized threshold voltage allows direct interfacing with standard logic levels for efficient switching control.
• ChipFET Packaging: Utilizes onsemi's proprietary ChipFET technology to provide low thermal resistance and high reliability in an 8-SMD footprint.

FET, MOSFET Arrays Applications

• Low-side switching in portable battery-powered devices
• Load switching in consumer electronics
• Power management circuits requiring dual P-channel isolation

FET, MOSFET Arrays Procurement Notes

Verify component authenticity through authorized onsemi distributors or certified partners. Check datasheet revisions for updates. Confirm RoHS compliance status as required by regional regulations. Validate package marking against official specifications to prevent counterfeits. Review PCN notices for any manufacturing changes.

FET, MOSFET Arrays Selection Notes

Select this component when a dual P-channel solution is needed with 20V rating and 2.1A current capacity. Ensure the application requires logic-level gate drive compatibility. Verify that the 8-SMD ChipFET package fits the PCB layout constraints. Compare Rds(on) and Qg values against alternative parts for efficiency requirements.

FET, MOSFET Arrays Part Context

This part belongs to the NTHD44 series of dual P-channel MOSFET arrays from onsemi. It shares the ChipFET packaging family with other variants like NTHD4102PT1G, which offers higher current ratings but different electrical characteristics. The series is designed for compact power switching applications.

FET, MOSFET Arrays Replacement Considerations

NTHD4102PT1G is a documented alternative offering 4.1A current and 120mΩ Rds(on) in the same package. Verify pinout compatibility and ensure the higher current rating does not exceed system limits. Check if the slightly different threshold voltage affects logic interface requirements.