NTJD1155LT2G

FET, MOSFET Arrays Overview

The NTJD1155LT2G is a P-Channel high-side load switch with integrated level-shift functionality, manufactured by onsemi. It combines a P-Channel MOSFET and an N-Channel MOSFET in a single SC-88 package. The device operates on supply lines from 1.8 V to 8.0 V and supports continuous load currents up to ±1.3 A at 25 °C. The N-Channel level-shifter accepts logic signals as low as 1.5 V. Key electrical parameters include a drain-to-source breakdown voltage of -8.0 V, a maximum power dissipation of 0.40 W at 25 °C, and an operating junction temperature range of −55 °C to 150 °C.

FET, MOSFET Arrays Feature Summary

• Integrates a P-Channel load switch and an N-Channel level-shifter for simplified control circuitry
• Supports low-voltage logic inputs starting at 1.5 V for the ON/OFF signal
• Features extremely low RDS(on) utilizing state-of-the-art trench technology
• Includes internal ESD protection on the N-Channel MOSFET

FET, MOSFET Arrays Applications

• Portable electronic equipment requiring low battery voltages
• High-side load switching applications
• Systems needing direct drive from low-level logic signals

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix LT2G against official documentation to confirm packaging details. Confirm that the component meets RoHS compliance and Pb-Free requirements as stated in the datasheet. Ensure the SC-88 package dimensions align with the target PCB layout constraints before finalizing procurement orders.

FET, MOSFET Arrays Selection Notes

Select this component when a compact solution is required for high-side switching in portable devices. The integrated level-shift capability eliminates external components typically needed to interface low-voltage logic with higher supply rails. Verify that the required load current does not exceed the thermal limits defined for the specific ambient temperature conditions.

FET, MOSFET Arrays Part Context

This part belongs to the NTJD1155L series of power MOSFETs designed specifically for load switch applications. It is distinct from standard discrete MOSFETs due to its built-in level-shifting architecture. The device is intended for use in space-constrained designs where minimizing component count and board area is critical for system efficiency.

FET, MOSFET Arrays Replacement Considerations

NTJD1155LT1G is listed as a variant within the same family sharing identical functional specifications and package type.