NTJD2152PT1

FET, MOSFET Arrays Overview

The NTJD2152PT1 is a dual P-channel trench MOSFET from onsemi, housed in an SC-88 (SOT-363) surface-mount package. It features an 8 V drain-to-source voltage rating and supports continuous drain currents up to -0.775 A at 25°C. The device incorporates ESD protection for the gate terminal and utilizes leading-edge trench technology to achieve low RDS(on). Key electrical parameters include a maximum RDS(on) of 0.9 Ω at VGS = -1.8 V and a total gate charge of 4.0 nC. Thermal resistance ratings are specified at 460 °C/W junction-to-ambient and 226 °C/W junction-to-lead.

FET, MOSFET Arrays Feature Summary

• Dual P-channel configuration with integrated ESD protection
• Low on-resistance achieved via trench technology
• Compact SC-88 footprint suitable for space-constrained designs

FET, MOSFET Arrays Applications

• Load power switching
• DC-DC conversion circuits
• Li-ion battery charging applications
• Portable electronics such as cell phones and media players

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix when purchasing. Suffixes such as T1, T2, or T4 indicate different tape and reel quantities. Ensure the 'G' suffix is included if lead-free packaging is required. Confirm the exact part number against the datasheet to avoid confusion with similar models.

FET, MOSFET Arrays Selection Notes

Select this component for low-voltage applications requiring dual P-channel isolation within a minimal footprint. Evaluate thermal constraints carefully due to the small package size. Verify that the 8 V breakdown voltage aligns with the system's operating limits and check gate threshold requirements for the driving logic levels.

FET, MOSFET Arrays Part Context

This device belongs to onsemi's Trench Small Signal MOSFET family. It shares the SC-88 package form factor with other small-signal transistors but is optimized for low-voltage power switching. The dual configuration allows for independent control of two channels within a single compact housing.

FET, MOSFET Arrays Replacement Considerations

Check pinout compatibility before substituting. Verify that replacement parts meet the 8 V voltage rating and current handling capabilities. Ensure the alternative device offers comparable RDS(on) and gate charge specifications to maintain circuit performance.