NTJD2152PT2G

FET, MOSFET Arrays Overview

The NTJD2152PT2G is a dual P-channel enhancement mode MOSFET manufactured by onsemi. It features an isolated channel configuration within a compact US6 surface-mount package with six pins. The device supports a maximum drain-source voltage of 20 V and a continuous drain current of 880 mA. Key electrical parameters include a typical gate charge of 2.2 nC at the specified gate-source voltage and a forward voltage of -0.8 V. The component operates reliably across a temperature range from -55°C to 150°C, with a maximum power dissipation of 350 mW.

FET, MOSFET Arrays Feature Summary

• Dual P-channel isolation architecture for independent control
• Compact US6 surface-mount packaging for space-constrained designs
• Enhanced mode operation optimized for low-voltage switching applications

FET, MOSFET Arrays Applications

• Low-side switching in portable consumer electronics
• Power management circuits in battery-operated devices
• Signal routing in mobile communication hardware

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix against official onsemi documentation to confirm package type and tape-and-reel specifications. Ensure compatibility with automated assembly processes by checking reel dimensions and feeder requirements. Confirm that the component meets all relevant environmental compliance standards required for the target market before finalizing procurement orders.

FET, MOSFET Arrays Selection Notes

Select this component when a dual P-channel solution is required in a minimal footprint. The 20 V rating suits low-voltage logic interfaces. Verify that the 880 mA current capability aligns with load requirements. Consider thermal management strategies given the 350 mW power dissipation limit in the small US6 package during high-duty cycle operations.

FET, MOSFET Arrays Part Context

This part belongs to onsemi's portfolio of small-signal MOSFETs designed for efficient power switching. The NTJD series typically integrates multiple channels in single packages to reduce board space. The US6 package variant offers a balance between thermal performance and size, suitable for dense PCB layouts in modern electronic devices.

FET, MOSFET Arrays Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Consult official cross-reference guides or manufacturer datasheets for verified alternatives with matching electrical and mechanical specifications.