FET, MOSFET Arrays NTJD3158CT1G product image

NTJD3158CT1G

$0.10
  • Description:MOSFET N/P-CH 20V 0.63A SC88
  • Series:-

SKU:c36d9488cf85 Category: Brand:

  
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NTJD3158CT1G is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N/P-CH 20V 0.63A SC88. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for NTJD3158CT1G

  • Description:MOSFET N/P-CH 20V 0.63A SC88
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:N and P-Channel
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):20V
  • Current - Continuous Drain (Id) @ 25°C:630mA, 820mA
  • Rds On (Max) @ Id, Vgs:375mOhm @ 630mA, 4.5V
  • Vgs(th) (Max) @ Id:1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:3nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds:46pF @ 20V
  • Power - Max:270mW
  • Operating Temperature:-
  • Mounting Type:Surface Mount
  • Package / Case:6-TSSOP, SC-88, SOT-363
  • Supplier Device Package:SC-88/SC70-6/SOT-363
  • Grade:-
  • Qualification:-

FET, MOSFET Arrays datasheet and documents for NTJD3158CT1G

NTJD3158CT1G

FET, MOSFET Arrays Overview

The NTJD3158CT1G is a dual complementary MOSFET array manufactured by onsemi, integrating one N-channel and one P-channel enhancement-mode transistor within a single SC-88 (SOT-363) surface-mount package. The device features a maximum drain-source voltage of 30V for the N-channel and 20V for the P-channel. It supports continuous drain currents of up to 880mA for the N-channel and 250mA for the P-channel at 25°C. Key electrical parameters include a maximum on-resistance of 1.5Ω for the N-channel and 1.2Ω for the P-channel at Vgs=4.5V. The component operates within a junction temperature range of -55°C to +150°C with a total power dissipation of 270mW.

FET, MOSFET Arrays Feature Summary

  • Integrates complementary N-channel and P-channel logic-level MOSFETs in a compact footprint
  • Designed for low-voltage signal switching and load management applications
  • Optimized for minimal gate charge to support high-speed digital control

FET, MOSFET Arrays Applications

  • Battery protection circuits in portable devices
  • Load switches for low-power peripheral interfaces
  • Signal level shifting between different voltage domains

FET, MOSFET Arrays Procurement Notes

Verify the complete part number including the suffix CT1G to ensure correct packaging configuration. Confirm RoHS compliance status through official manufacturer documentation prior to integration. Validate that the SC-88 footprint matches the target PCB layout specifications exactly.

FET, MOSFET Arrays Selection Notes

Select this component when space-constrained designs require complementary switching capabilities. Ensure the application voltage remains below the 30V N-channel and 20V P-channel limits. Consider the 1.5Ω and 1.2Ω on-resistances for thermal management in continuous current scenarios.

FET, MOSFET Arrays Part Context

This part belongs to the NTJD41xxC series of dual complementary MOSFETs from onsemi. It shares the SOT-363 package form factor with other members like the NTJD4158CT1G but differs in specific voltage and current ratings. The series is designed for general-purpose low-voltage switching tasks.

FET, MOSFET Arrays Replacement Considerations

Direct pin-compatible alternatives within the same series include the NTJD4158CT1G, though electrical ratings differ. Verify compatibility with any cross-referenced parts from other manufacturers by comparing Rds(on), Vgs(th), and package dimensions.

NTJD3158CT1GNTJD3158CT1G
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