FET, MOSFET Arrays NTJD4105CT2 product image

NTJD4105CT2

$0.16
  • Description:MOSFET N/P-CH 20V/8V 0.63A SC88
  • Series:-

SKU:84a209485896 Category: Brand:

  
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NTJD4105CT2 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N/P-CH 20V/8V 0.63A SC88. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for NTJD4105CT2

  • Description:MOSFET N/P-CH 20V/8V 0.63A SC88
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:N and P-Channel
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):20V, 8V
  • Current - Continuous Drain (Id) @ 25°C:630mA, 775mA
  • Rds On (Max) @ Id, Vgs:375mOhm @ 630mA, 4.5V
  • Vgs(th) (Max) @ Id:1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:3nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds:46pF @ 20V
  • Power - Max:270mW
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:6-TSSOP, SC-88, SOT-363
  • Supplier Device Package:SC-88/SC70-6/SOT-363
  • Grade:-
  • Qualification:-

FET, MOSFET Arrays datasheet and documents for NTJD4105CT2

NTJD4105CT2

FET, MOSFET Arrays Overview

The NTJD4105CT2G is a complementary MOSFET array manufactured by onsemi, housed in a SOT-363-6 surface-mount package. It integrates one N-channel and one P-channel enhancement-mode transistor within a single compact footprint. The N-channel device supports a drain-source voltage of 20V with a continuous current of 630mA and an on-resistance of 290mΩ. The P-channel counterpart offers a 8V breakdown voltage, 775mA continuous current, and 220mΩ on-resistance. Both transistors operate within a junction temperature range of -55°C to +150°C, featuring low gate charge values of 1.3nC for the N-channel and 2.2nC for the P-channel.

FET, MOSFET Arrays Feature Summary

  • Dual complementary configuration integrating N-channel and P-channel enhancement-mode MOSFETs in a single SOT-363 package.

FET, MOSFET Arrays Applications

  • Battery protection circuits requiring compact dual-transistor solutions.

FET, MOSFET Arrays Procurement Notes

Verify the specific suffix against official documentation, as standard listings typically reference the NTJD4105CT2G variant. Confirm RoHS compliance status and ensure the ordering code matches the exact tape-and-reel quantity requirements for your manufacturing process. Cross-reference datasheet revisions to guarantee parameter consistency.

FET, MOSFET Arrays Selection Notes

Select this component when space-constrained designs require matched N/P-channel pairs for load switching or level shifting. Evaluate the distinct voltage ratings (20V N-channel vs. 8V P-channel) to ensure compatibility with the target circuit rails. Consider the low gate charge characteristics for applications prioritizing fast switching speeds within small signal constraints.

FET, MOSFET Arrays Part Context

This part belongs to the NTJD4105C series of small-signal complementary MOSFETs from onsemi. These devices are engineered for high-density PCB layouts where multiple discrete transistors would otherwise consume excessive board area. The series provides a standardized solution for low-power switching applications requiring both polarities.

FET, MOSFET Arrays Replacement Considerations

The FDG8842CZ is listed as a discontinued alternative with available stock. Verify pinout compatibility and electrical parameter margins before substitution, noting differences in voltage ratings and package variations between the SC-88 and SOT-363 form factors.

NTJD4105CT2NTJD4105CT2
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