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Product Detailed Parameters
- Description：MOSFET N/P-CH 20V/8V 0.63A SC88
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：20V, 8V
- Current - Continuous Drain (Id) @ 25°C：630mA, 775mA
- Rds On (Max) @ Id, Vgs：375mOhm @ 630mA, 4.5V
- Vgs(th) (Max) @ Id：1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：3nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：46pF @ 20V
- Power - Max：270mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-TSSOP, SC-88, SOT-363
- Supplier Device Package：SC-88/SC70-6/SOT-363
- Grade：-
- Qualification：-
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Overview
The NTJD4105CT2G is a complementary dual MOSFET array manufactured by onsemi, housed in a surface-mount SOT-363-6 package. It integrates one N-channel and one P-channel enhancement-mode transistor within a single silicon component. The N-channel device supports a drain-source voltage of 20 V with a continuous current of 630 mA and an on-resistance of 290 mOhms. The P-channel counterpart handles -8 V and -775 mA, featuring an on-resistance of 220 mOhms. Both transistors operate within a junction temperature range of -55°C to +150°C and dissipate up to 270 mW.
Feature Summary
- Complementary configuration combining N-channel and P-channel enhancement-mode MOSFETs in a compact footprint
- Logic-level gate drive capability suitable for low-voltage digital control applications
- Small signal design optimized for high-speed switching with low gate charge characteristics
Applications
- Low-side and high-side switching in portable battery-powered devices
- Load switching circuits for consumer electronics and mobile phones
- DC-DC converter input/output stages requiring compact complementary pairs
Procurement Notes
Verify the complete part number including the suffix CT2G to ensure correct packaging and tape-and-reel specifications. Confirm RoHS compliance status through official manufacturer documentation or authorized distributor declarations prior to integration into production assemblies.
Selection Notes
Select this component when space-constrained designs require matched N/P channel pairs with low on-resistance. Ensure the required drain-source voltage ratings of 20V and 8V exceed circuit operating peaks. Verify that the thermal dissipation limits align with the expected power load in the target application environment.
Part Context
This part belongs to the NTJD4105C series of small-signal complementary MOSFETs from onsemi. It serves as a direct replacement for obsolete parts like the FDG8842CZ in specific legacy designs, offering similar functionality in the SC-88/SOT-363 form factor while maintaining modern manufacturing standards.
Replacement Considerations
The NTJD4105CT1G is documented as a substitute for the discontinued FDG8842CZ. Verify pinout compatibility and electrical parameter margins before swapping between different manufacturers' complementary arrays.
