NTJD4401NT1G-001

FET, MOSFET Arrays Overview

The NTJD4401NT1G is a small signal MOSFET array manufactured by onsemi, featuring two isolated N-channel enhancement-mode transistors in a surface-mount SC-88 package. It supports a maximum drain-source voltage of 30 V and a continuous drain current of 250 mA. The device exhibits a maximum drain-source resistance of 2.5 Ω and a typical gate charge of 0.9 nC at the specified gate-source voltage. With a maximum power dissipation of 2.72 W and an operating temperature range from -55°C to 150°C, it includes integrated ESD protection. The component measures 2.2 mm in length and 1 mm in height.

FET, MOSFET Arrays Feature Summary

• Dual N-channel configuration with isolated transistor architecture for compact circuit integration
• Integrated electrostatic discharge (ESD) protection mechanisms
• Enhanced mode operation suitable for low-voltage switching applications

FET, MOSFET Arrays Applications

• Portable consumer electronics requiring space-efficient switching solutions
• Battery-powered devices utilizing low-voltage logic interfaces
• Signal routing circuits in mobile communication hardware

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix against official manufacturer documentation to confirm exact packaging and tape-and-reel specifications. Ensure compliance with automotive standards such as AEC-Q101 if required for the target application. Cross-reference the full part number with authorized distributors to validate authenticity and current production status before finalizing procurement orders.

FET, MOSFET Arrays Selection Notes

Select this component when dual isolated N-channel switching is required within a minimal footprint. The 30 V rating and 250 mA current capacity define its operational limits for low-power signal management. Consider the SC-88 package dimensions for PCB layout constraints and verify thermal dissipation requirements against the 2.72 W maximum power rating during design validation.

FET, MOSFET Arrays Part Context

This device belongs to the NTJD series of small signal MOSFET arrays designed for high-density surface-mount applications. It shares architectural similarities with other dual-channel variants in the lineup but is distinguished by its specific 30 V voltage rating and N-channel configuration. The SC-88 package allows for automated assembly in compact electronic designs.

FET, MOSFET Arrays Replacement Considerations

Consult official substitution guides for compatible alternatives. Verify pinout compatibility and electrical parameters such as Rds(on) and Vgs(th) before implementing any cross-brand replacements.