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NTJD4401NT2G is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET 2N-CH 20V 0.63A SC88. Review the specifications below when checking this part for your BOM.
The NTJD4401NT2G is a dual N-channel enhancement mode MOSFET array manufactured by onsemi. It features a maximum drain-source voltage (Vds) of 20 V and a continuous drain current (Id) of 630 mA. The device utilizes an SC-88 surface-mount package with six pins, measuring 2.2 mm in length and 1 mm in height. Key electrical parameters include a maximum drain-source resistance (Rds(on)) of 445 mΩ at 4.5 V gate drive and a typical gate charge (Qg) of 1.3 nC. The component operates within a temperature range of -55°C to +150°C junction temperature.
Verify the specific suffix 'NT2G' against official manufacturer documentation to confirm tape and reel specifications or packaging variations compared to standard 'T1G' variants. Ensure compatibility with automated pick-and-place equipment if using reel packaging. Cross-reference datasheet revisions to confirm parameter stability before finalizing procurement orders.
Select this component when a dual N-channel MOSFET is required in an ultra-small SC-88 footprint. Consider the 20 V rating and 630 mA current limit for appropriate load matching. Evaluate the 445 mΩ Rds(on) for efficiency needs at the intended operating current. Confirm that the logic-level threshold voltage aligns with the system's available gate drive voltage.
This part belongs to onsemi's NTJD series of small signal MOSFET arrays designed for portable applications. It complements other devices like the NTJD4401NT1G and NTJD4152PT1G within the same family, offering complementary channel options and varying current ratings while maintaining the compact SC-88 form factor suitable for dense PCB layouts.
The NTJD4401NT1G is a verified equivalent part number from onsemi with identical electrical characteristics and pinout. Verify package dimensions and thermal performance when substituting.
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