NTJD5121NT1G

$0.24

Description：MOSFET 2N-CH 60V 0.295A SC88
Series：-

SKU:6e5ffe4a9836 Category: FET, MOSFET Arrays Brand: onsemi

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Product introduction

NTJD5121NT1G is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET 2N-CH 60V 0.295A SC88. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for NTJD5121NT1G

Description：MOSFET 2N-CH 60V 0.295A SC88
Series：-
Mfr：onsemi
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：60V
Current - Continuous Drain (Id) @ 25°C：295mA
Rds On (Max) @ Id, Vgs：1.6Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：0.9nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：26pF @ 20V
Power - Max：250mW
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：6-TSSOP, SC-88, SOT-363
Supplier Device Package：SC-88/SC70-6/SOT-363
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for NTJD5121NT1G

NTJD5121NT1G

FET, MOSFET Arrays Overview

The NTJD5121NT1G is a dual N-channel RF MOSFET transistor manufactured by onsemi. It features a silicon technology base and operates within a voltage range of up to 60V with a continuous drain current of 295mA. The device exhibits an on-resistance of 1.6 ohms and is housed in an SC-88 surface-mount package. Designed for radio frequency applications, this component integrates ESD protection capabilities. It is supplied in reel, cut tape, or MouseReel formats, supporting automated assembly processes while maintaining high reliability standards for portable electronic devices.

FET, MOSFET Arrays Feature Summary

Dual N-channel configuration integrated into a compact footprint
Built-in electrostatic discharge (ESD) protection circuitry
Optimized for radio frequency power switching applications

FET, MOSFET Arrays Applications

Portable communication equipment
RF signal switching circuits
Mobile handset power management modules

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix against official onsemi documentation to ensure correct packaging and tape-and-reel specifications. Confirm that the SC-88 package dimensions align with your PCB layout requirements. Check RoHS compliance status directly from the manufacturer's datasheet before finalizing procurement orders to meet regulatory standards.

FET, MOSFET Arrays Selection Notes

Select this component when a dual N-channel MOSFET with integrated ESD protection is required for space-constrained designs. Ensure the 60V breakdown voltage and 295mA current rating suit the target circuit load. Compare the 1.6 ohm on-resistance against system efficiency requirements to validate performance suitability for low-power RF applications.

FET, MOSFET Arrays Part Context

This part belongs to the NVJD5121N series of small-signal MOSFETs designed for portable electronics. It serves as a specialized solution for RF switching tasks where size and protection are critical. The SC-88 package allows for high-density mounting on printed circuit boards, making it suitable for modern mobile devices and compact wireless transceivers.