FET, MOSFET Arrays NTLGD3502NT2G product image

NTLGD3502NT2G

$0.40
  • Description:MOSFET 2N-CH 20V 4.3A/3.6A 6DFN
  • Series:-

SKU:9e149da6a209 Category: Brand:

  
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NTLGD3502NT2G is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET 2N-CH 20V 4.3A/3.6A 6DFN. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for NTLGD3502NT2G

  • Description:MOSFET 2N-CH 20V 4.3A/3.6A 6DFN
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Bulk
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual)
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):20V
  • Current - Continuous Drain (Id) @ 25°C:4.3A, 3.6A
  • Rds On (Max) @ Id, Vgs:60mOhm @ 4.3A, 4.5V
  • Vgs(th) (Max) @ Id:2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:4nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds:480pF @ 10V
  • Power - Max:1.74W
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:6-VDFN Exposed Pad
  • Supplier Device Package:6-DFN (3x3)
  • Grade:-
  • Qualification:-

FET, MOSFET Arrays datasheet and documents for NTLGD3502NT2G

NTLGD3502NT2G

FET, MOSFET Arrays Overview

The NTLGD3502NT2G is a dual N-channel enhancement mode power MOSFET manufactured by onsemi. It integrates two independent channels within a single surface-mount package to optimize board space and reduce system complexity. The device is engineered for high-efficiency switching applications, featuring low on-resistance to minimize conduction losses and optimized gate charge characteristics to facilitate fast switching transitions with reduced driver requirements.

FET, MOSFET Arrays Feature Summary

  • Dual channel integration for compact circuit design
  • Low on-resistance for efficient power handling
  • Optimized gate charge for improved switching performance

FET, MOSFET Arrays Applications

  • DC-DC converter synchronous rectification
  • High-side and low-side switching circuits
  • Power management modules in computing equipment

FET, MOSFET Arrays Procurement Notes

Verify the component authenticity through authorized onsemi distribution channels or certified suppliers. Confirm that the part number matches the exact specification sheet provided by the manufacturer. Ensure compliance with RoHS directives and check for automotive qualification prefixes if required by the specific application environment. Request batch traceability documentation upon receipt.

FET, MOSFET Arrays Selection Notes

Select this component when space-constrained designs require dual switching elements. Evaluate thermal dissipation capabilities based on the specific PCB copper area and ambient temperature conditions. Compare total gate charge parameters against available gate driver outputs to ensure adequate switching speed without excessive drive current demands.

FET, MOSFET Arrays Part Context

This device belongs to onsemi's portfolio of discrete power semiconductors designed for modern electronic systems. It complements other MOSFET offerings by providing integrated dual-channel functionality, reducing the bill of materials count compared to using separate single-channel devices for similar switching tasks.

FET, MOSFET Arrays Replacement Considerations

Consult official onsemi substitution guides for verified equivalent parts. Cross-reference pin configurations and electrical ratings before implementing any alternative components to ensure compatibility with existing circuit layouts and thermal management strategies.

NTLGD3502NT2GNTLGD3502NT2G
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