NTLJD3119CTBG

FET, MOSFET Arrays Overview

The NTLJD3119CTBG is a complementary dual MOSFET array from onsemi, integrating N-channel and P-channel devices in a single surface-mount package. It features a drain-source voltage of 20V for the N-channel and -20V for the P-channel. The component supports continuous drain currents of 2.6A and 2.3A respectively. Key electrical parameters include a gate threshold voltage of 1V at 250µA and forward transconductance values of 4.2S and 3.1S. Fall times are specified at 4.7ns and 13.2ns. The device operates within a junction temperature range of -55°C to +150°C and has a maximum power dissipation of 710mW.

FET, MOSFET Arrays Feature Summary

• Complementary N-channel and P-channel MOSFET configuration
• WDFN package with exposed drain pad for enhanced thermal performance
• Pin layout compatible with SC-88 footprint
• Low on-resistance utilizing advanced trench technology

FET, MOSFET Arrays Applications

• Load management in PDAs
• Power switching in cellular phones
• Hard drive interface circuits

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix 'CTBG' against the manufacturer's current datasheet to ensure correct packaging and tape-and-reel specifications. Confirm that the WDFN 6-pin package dimensions match the target PCB design constraints. Cross-reference the thermal resistance data provided in the official documentation to validate heat dissipation requirements for the intended application environment.

FET, MOSFET Arrays Selection Notes

Select this component when a compact solution for low-voltage load switching is required. The complementary nature simplifies circuit design by reducing component count compared to discrete pairs. Ensure the 20V rating aligns with system voltage levels. The SC-88 compatible footprint facilitates easy integration into existing designs or space-constrained mobile applications without requiring significant layout modifications.

FET, MOSFET Arrays Part Context

This part belongs to onsemi's portfolio of power MOSFET arrays designed for portable electronics. It utilizes trench technology to achieve low on-resistance, which is critical for efficiency in battery-powered devices. The integrated dual configuration offers a space-saving alternative to separate N and P-channel transistors, supporting the trend toward miniaturization in consumer electronics hardware.

FET, MOSFET Arrays Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation.