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NTLUD3191PZTBG is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET 2P-CH 20V 1.1A 6UDFN. Review the specifications below when checking this part for your BOM.
The NTLUD3191PZTBG is a dual P-channel Power MOSFET from onsemi's µCool series, housed in a UDFN6 package measuring 1.6x1.6x0.55 mm. It features an exposed drain pad for thermal management and offers a drain-to-source voltage of -20 V with a continuous drain current of -1.4 A at 25°C. The device provides low on-resistance, specified as 250 mΩ at -4.5 V gate drive and 380 mΩ at -2.5 V. It includes built-in ESD protection rated at 1000 V (HBM) and is available in lead-free tape and reel packaging.
Verify the specific ordering suffix to confirm the packaging format. The NTLUD3191PZTBG designation indicates a tape and reel configuration. Ensure compatibility with the required surface mount footprint dimensions and verify that the component meets the necessary environmental standards for the intended deployment environment.
Select this component for applications requiring compact dual P-channel switching solutions. The low profile package supports board space optimization. Evaluate the thermal resistance requirements against the exposed drain pad design to ensure adequate heat dissipation for the specific load conditions and ambient operating temperatures.
This part belongs to the NTLUD3191PZ family of dual P-channel MOSFETs. It utilizes the µCool technology platform designed for efficient power switching. The device is manufactured by onsemi and is distinct from single-channel variants within the broader product portfolio.
FDMA910PZ
The maximum gate-to-source voltage is ±8.0 V.
Yes, the device features built-in ESD protection with a Human Body Model rating of 1000 V.
The typical total gate charge is 3.5 nC when tested at a gate-to-source voltage of -4.5 V and a drain-to-source voltage of -10 V.
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