NTLUD3A260PZTAG

Overview

The NTLUD3A260PZTAG is a dual P-Channel Power MOSFET manufactured by onsemi, housed in a compact 6-UDFN (1.6x1.6 mm) surface-mount package. It features a drain-source breakdown voltage (Vds) of 20 V and a continuous drain current (Id) of 1.7 A. The device exhibits a maximum on-resistance (Rds(on)) of 650 mΩ at Vgs = -4.5 V and 4.2 nC gate charge. It operates within a temperature range of -55°C to +150°C with a power dissipation rating of 800 mW.

Feature Summary

• Dual P-Channel configuration for space-efficient circuit designs
• Logic-level gate drive capability for direct microcontroller interfacing
• Compact UDFN-6 package optimized for high-density PCB layouts

Applications

• Battery protection circuits
• Power management modules
• Small signal switching applications

Procurement Notes

This component is listed as obsolete or end-of-life by the manufacturer. Verification of availability through authorized distributors is essential, as stock may be limited or subject to last-time-buy constraints. Ensure compatibility with existing supply chain requirements before finalizing procurement plans due to potential discontinuation risks.

Selection Notes

Select this part for low-voltage, low-current dual-channel switching needs where board space is constrained. The 20V rating suits single-cell lithium battery systems. Consider thermal management due to the small package size and 800mW dissipation limit. Verify that the 650mΩ Rds(on) meets efficiency requirements for the specific load current.

Part Context

Part of onsemi's uCool Power MOSFET family, designed for efficient power switching in portable electronics. The NTLUD3A series utilizes advanced silicon technology to minimize on-resistance while maintaining robust ESD protection. This specific model targets applications requiring dual P-channel functionality in minimal footprint packages.

Replacement Considerations

FDMA1023PZ is a confirmed substitute offering similar -20V dual P-Channel specifications.