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Product Detailed Parameters
- Description：MOSFET 2P-CH 20V 1.3A 6UDFN
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：1.3A
- Rds On (Max) @ Id, Vgs：200mOhm @ 2A, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：4.2nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：300pF @ 10V
- Power - Max：500mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-UFDFN Exposed Pad
- Supplier Device Package：6-UDFN (1.6x1.6)
- Grade：-
- Qualification：-
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Overview
The NTLUD3A260PZTBG is a dual P-channel power MOSFET manufactured by onsemi, belonging to the uCool Power MOSFET series. It features a 20V drain-source voltage rating and supports a continuous drain current of 5.6A at 25°C. The device exhibits a maximum on-resistance of 26mΩ at Vgs = -4.5V. Packaged in a compact 6-UDFN (2x2) surface-mount footprint with an exposed pad, it operates within a junction temperature range of -55°C to +150°C. This component integrates two independent P-channel transistors in a single package to optimize board space for low-voltage switching applications.
Feature Summary
- Dual configuration integrating two P-channel MOSFETs in a single compact package
- Low on-resistance characteristic optimized for efficient power switching
- Enhanced thermal performance via exposed pad design in UDFN-6 package
Applications
- Low-side and high-side load switching circuits
- Power management modules in portable electronic devices
- Battery protection and management systems
Procurement Notes
Verify the specific suffix TBG against official datasheets to confirm reel packaging specifications. Confirm RoHS compliance status through manufacturer documentation prior to integration. Ensure EOL or PCN notices are reviewed if sourcing from secondary markets, as availability may vary.
Selection Notes
Select this component when dual P-channel isolation is required in a minimal footprint. Compare Rds(on) values at relevant gate drive voltages against system requirements. Verify that the 20V Vds rating exceeds the maximum circuit voltage including transients. Ensure thermal design accounts for the 6-UDFN package dissipation capabilities.
Part Context
This part belongs to onsemi's uCool Power MOSFET family, designed for high-efficiency switching. The NTLUD3 series specifically offers dual configurations to reduce assembly complexity. It serves as a discrete alternative to integrated power switches in cost-sensitive consumer and industrial electronics.
Replacement Considerations
Cross-reference with other dual P-channel MOSFETs in 6-UDFN packages from onsemi or competitors. Verify pinout compatibility and electrical parameters such as Vds, Id, and Rds(on) before substitution.
