NTLUD4C26NTBG

Overview

The NTLUD4C26NTBG is a single-channel, low-voltage GaN FET from onsemi's UGaN series. It features an enhancement-mode normally-off configuration with a 60V drain-source breakdown voltage and a typical on-resistance of 26mΩ. The device utilizes a DFN5x6 package for efficient thermal management. Key electrical characteristics include a continuous drain current of 38A and a gate-source threshold voltage ranging from 1.2V to 2.0V. Designed for high-frequency switching applications, it offers fast turn-on and turn-off times to minimize switching losses in power conversion circuits.

Feature Summary

• Enhancement-mode normally-off operation ensures safe default state without bias voltage.
• Low on-resistance minimizes conduction losses in high-current applications.
• Fast switching speeds reduce dynamic power loss during transitions.
• Integrated body diode supports synchronous rectification topologies.

Applications

• Point-of-load (POL) converters for server and data center power distribution.
• High-efficiency DC-DC buck regulators in consumer electronics.
• Class-D audio amplifier output stages requiring fast transient response.
• Industrial motor drives and inverters utilizing synchronous rectification.

Procurement Notes

Verify the specific suffix 'NTBG' against the manufacturer's official datasheet to confirm the tape-and-reel packaging quantity and lead time requirements. Ensure the ordering part number matches the exact pinout and thermal pad specifications required by your PCB layout. Cross-reference the RoHS compliance status directly with the component marking or official documentation prior to procurement.

Selection Notes

Select this component when designing systems requiring sub-100V voltage ratings with superior efficiency compared to silicon MOSFETs. Evaluate the thermal resistance capabilities of the DFN5x6 package against your expected power dissipation levels. Consider the gate charge parameters to ensure compatibility with your driver circuit's current sourcing and sinking capabilities for optimal switching performance.

Part Context

This component belongs to onsemi's UGaN family of gallium nitride transistors, designed to replace traditional silicon devices in compact power supplies. The UGaN series targets high-density applications where space and efficiency are critical constraints. It represents the evolution of onsemi's discrete GaN technology, focusing on reliability and ease of integration into standard surface-mount assembly processes.

Replacement Considerations

Direct replacements may include other 60V enhancement-mode GaN FETs from onsemi such as the NTLUD series variants. Verify pin-to-pin compatibility and thermal characteristics before substituting. Alternative manufacturers offering similar 60V GaN devices should be evaluated based on switching speed and on-resistance metrics to ensure equivalent system performance.