NTMD3N08LR2

Overview

The NTMD3N08LR2 is a dual N-channel power MOSFET manufactured by onsemi, housed in an SO-8 surface-mount package. It integrates two independent enhancement-mode transistors within a single component to facilitate compact circuit designs. The device features a drain-source breakdown voltage of 80 V and a maximum continuous drain current of 2.3 A. Typical static drain-to-source on-resistance values are specified at 185 mΩ for the NTMD3N08 variant and 200 mΩ for the NTMD3N08L variant, measured under defined gate-source voltage conditions. These electrical characteristics support its use in general-purpose power switching applications requiring efficient thermal management and low conduction losses.

Feature Summary

• Dual configuration integrating two N-channel MOSFETs in a single SO-8 package
• Low on-resistance design to minimize conduction losses and improve efficiency
• Enhancement mode operation suitable for standard logic-level control

Applications

• General-purpose power switching circuits
• DC-DC converter topologies
• Motor driver interfaces

Procurement Notes

Verify the specific suffix against official datasheets to confirm exact on-resistance tolerances and avalanche energy ratings. Confirm RoHS compliance status as indicated in technical documentation. Ensure the selected package matches the required PCB footprint and thermal dissipation capabilities for the target application environment.

Selection Notes

Select this component when space constraints require dual transistor integration in an SO-8 form factor. Evaluate the 80 V breakdown voltage against peak transient loads. Compare the 2.3 A current rating with steady-state requirements. Consider the thermal resistance of the SO-8 package for heat dissipation needs in enclosed designs.

Part Context

This part belongs to onsemi's discrete semiconductor portfolio, specifically within the general-purpose power MOSFET category. It serves as a solution for designers needing multiple switching elements in a minimal footprint. The dual configuration simplifies layout compared to using separate single transistors, reducing board area and interconnect complexity in power stages.

Replacement Considerations

Cross-reference with other dual N-channel MOSFETs in SO-8 packages offering similar 80 V ratings and comparable on-resistance values. Verify pinout compatibility before substitution. Ensure equivalent thermal performance and current handling capabilities match the original design specifications.