NTMD3P03R2

$0.20

Description：MOSFET PWR P-CHAN DUAL 30V 8SOIC
Series：-

SKU:220a94b72fc0 Category: FET, MOSFET Arrays Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：MOSFET PWR P-CHAN DUAL 30V 8SOIC
Series：-
Mfr：onsemi
Package：Bulk
Technology：-
Configuration：-
FET Feature：-
Drain to Source Voltage (Vdss)：-
Current - Continuous Drain (Id) @ 25°C：-
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Input Capacitance (Ciss) (Max) @ Vds：-
Power - Max：-
Operating Temperature：-
Mounting Type：-
Package / Case：-
Supplier Device Package：-
Grade：-
Qualification：-

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NTMD3P03R2

Overview

The NTMD3P03R2 is a dual P-channel enhancement-mode power MOSFET in an SOIC-8 package. It features a drain-to-source voltage (VDSS) of -30 V and a continuous drain current (ID) of -3.05 A at 25°C. The typical on-state resistance (RDS(on)) is 85 mΩ at VGS = -10 V. Total gate charge (Qtot) is typically 25 nC. The device operates within a junction temperature range of -55°C to +150°C and includes an integrated body diode with a reverse recovery time (trr) of 34 ns.

Feature Summary

Dual configuration in a miniature surface-mount package for board space savings
Low on-state resistance for high efficiency
Integrated fast-recovery body diode

Applications

DC-DC converters
Low voltage motor control
Power management in portable and battery-powered products such as computers, printers, PCMCIA cards, and cellular telephones

Procurement Notes

Verify the specific ordering suffix when purchasing. The base part number NTMD3P03R2 is supplied in tape and reel packaging with a quantity of 2500 units. An alternative variant, NTMD3P03R2G, indicates a lead-free package configuration. Confirm that the received component matches the required environmental compliance standards for the intended assembly process.

Selection Notes

Select this component for applications requiring dual P-channel switching in a compact form factor. Ensure the gate drive voltage supports the specified RDS(on) characteristics, typically -10 V or -4.5 V depending on the load current requirements. Verify thermal management capabilities against the specified junction-to-ambient thermal resistance values for the target PCB layout.

Part Context

This component belongs to the Power MOSFET category from onsemi. It is designed for low-voltage, high-density power switching applications. The dual configuration allows for efficient half-bridge or synchronous rectifier implementations within the standard SOIC-8 footprint.