NTMD4840NR2G

NTMD4840NR2G

$0.55
  • Description:MOSFET 2N-CH 30V 4.5A 8SOIC
  • Series:-

SKU:70e465924662 Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET 2N-CH 30V 4.5A 8SOIC
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT),Bulk
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual)
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):30V
  • Current - Continuous Drain (Id) @ 25°C:4.5A
  • Rds On (Max) @ Id, Vgs:24mOhm @ 6.9A, 10V
  • Vgs(th) (Max) @ Id:3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:9.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:520pF @ 15V
  • Power - Max:680mW
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package:8-SOIC
  • Grade:-
  • Qualification:-

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NTMD4840NR2G

Overview

The NTMD4840NR2G is a dual N-channel enhancement mode MOSFET manufactured by onsemi. It utilizes silicon technology and is housed in an SOIC-8 surface-mount package. The device features a drain-source breakdown voltage (Vds) of 30 V and a continuous drain current (Id) of 4.5 A at 25°C. Its maximum drain-source on-resistance (Rds(on)) is 28 mΩ, measured at a gate-source voltage of 10 V. The component operates with a gate-source voltage range of ±20 V and has a threshold voltage (Vgs(th)) of 1.5 V. Key switching parameters include a gate charge (Qg) of 4.8 nC, a rise time of 5 ns, and a fall time of 3 ns. Power dissipation is rated at 1.95 W, with an operating temperature range from -55°C to +150°C.

Feature Summary

  • Dual channel configuration for space-efficient circuit designs
  • Low on-resistance characteristics for efficient power handling
  • Fast switching performance suitable for high-frequency applications

Applications

  • Power management circuits requiring dual N-channel control
  • DC-DC converter topologies utilizing low-voltage MOSFETs
  • Load switching applications in consumer electronics

Procurement Notes

Verify the current lifecycle status before procurement, as the component is listed as obsolete or end-of-life by the manufacturer. Confirm availability through authorized distributors or secondary market suppliers. Ensure that any sourced units are genuine and match the specified SOIC-8 package and electrical parameters. Check for moisture sensitivity level compliance if storage conditions have been compromised.

Selection Notes

Select this component when a dual N-channel MOSFET with a 30 V rating and approximately 4.5 A current capacity is required in an SOIC-8 package. Consider the 28 mΩ on-resistance for thermal management in low-voltage applications. Verify that the 4.8 nC gate charge aligns with the driving capability of the control logic. Compare against single-channel alternatives if pin count reduction is not a priority.

Part Context

This part belongs to the NTMD4840N series of dual N-channel MOSFETs from onsemi. It is designed for general-purpose switching applications where board space is limited. The series typically targets cost-sensitive consumer and industrial markets. The NR2G suffix indicates specific packaging and tape-and-reel specifications defined by the manufacturer.

Replacement Considerations

Check for direct replacements within the NTMD4840N family. Evaluate other dual N-channel MOSFETs with similar 30 V, 4.5 A, and SOIC-8 specifications from alternative manufacturers. Ensure pinout compatibility and electrical parameter equivalence before substitution.

NTMD4840NR2GNTMD4840NR2G
$0.55
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