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The NTMD6P02R2G is a dual P-channel power MOSFET manufactured by onsemi, housed in an SOIC-8 surface-mount package. It features a drain-source breakdown voltage (Vds) of 20 V and a continuous drain current (Id) of 6 A. The device exhibits a maximum on-resistance (Rds(on)) of 35 mΩ at a gate-source voltage (Vgs) of -4.5 V. Gate threshold voltage (Vgs(th)) is specified at 1.2 V, with a total gate charge (Qg) of 12 nC. Operating temperatures range from -55 °C to +150 °C, with a power dissipation rating of 2 W.
Verify the manufacturer part number against official onsemi documentation to ensure authenticity. Confirm that the component meets RoHS compliance standards as indicated in public datasheets. Check for specific ordering suffixes if required by design specifications. Ensure storage conditions adhere to moisture sensitivity level guidelines prior to assembly.
Select this component for designs requiring dual P-channel switching with a 20 V voltage rating. The 6 A current capacity and 35 mΩ on-resistance make it suitable for low-power load switches. Compare gate charge requirements against driver capabilities to ensure adequate switching speed. Verify package compatibility with PCB footprint constraints.
This component belongs to the NTMD6P02 series of dual MOSFETs from onsemi. It shares architectural similarities with other devices in the family, such as the NTMD6N02R2G, but differs in channel type and voltage ratings. The series is designed for general-purpose power switching in consumer and industrial electronics.
Publicly confirmed substitute part numbers are not available in the provided source material. Consult official cross-reference guides or distributor databases for verified alternatives matching the 20 V, 6 A, SOIC-8 specification.