NTMD6P02R2G

NTMD6P02R2G

$1.55
  • Description:MOSFET 2P-CH 20V 4.8A 8SOIC
  • Series:-

SKU:a6b3574abe1b Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET 2P-CH 20V 4.8A 8SOIC
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 P-Channel (Dual)
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):20V
  • Current - Continuous Drain (Id) @ 25°C:4.8A
  • Rds On (Max) @ Id, Vgs:33mOhm @ 6.2A, 4.5V
  • Vgs(th) (Max) @ Id:1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:35nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds:1700pF @ 16V
  • Power - Max:750mW
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package:8-SOIC
  • Grade:-
  • Qualification:-

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NTMD6P02R2G

Overview

The NTMD6P02R2G is a dual P-channel power MOSFET manufactured by onsemi, housed in an SOIC-8 surface-mount package. It features a drain-source breakdown voltage (Vds) of 20 V and a continuous drain current (Id) of 6 A. The device exhibits a maximum on-resistance (Rds(on)) of 35 mΩ at a gate-source voltage (Vgs) of -4.5 V. Gate threshold voltage (Vgs(th)) is specified at 1.2 V, with a total gate charge (Qg) of 12 nC. Operating temperatures range from -55 °C to +150 °C, with a power dissipation rating of 2 W.

Feature Summary

  • Dual configuration integrating two independent P-channel MOSFETs within a single compact SOIC-8 package for space-constrained designs.
  • Low on-resistance characteristics optimized for efficient power switching and reduced conduction losses in low-voltage applications.
  • Enhanced thermal performance supporting operation up to 150 °C junction temperature for robust reliability.

Applications

  • Power management circuits requiring dual channel control
  • Load switching applications in portable electronics
  • DC-DC converter output stages

Procurement Notes

Verify the manufacturer part number against official onsemi documentation to ensure authenticity. Confirm that the component meets RoHS compliance standards as indicated in public datasheets. Check for specific ordering suffixes if required by design specifications. Ensure storage conditions adhere to moisture sensitivity level guidelines prior to assembly.

Selection Notes

Select this component for designs requiring dual P-channel switching with a 20 V voltage rating. The 6 A current capacity and 35 mΩ on-resistance make it suitable for low-power load switches. Compare gate charge requirements against driver capabilities to ensure adequate switching speed. Verify package compatibility with PCB footprint constraints.

Part Context

This component belongs to the NTMD6P02 series of dual MOSFETs from onsemi. It shares architectural similarities with other devices in the family, such as the NTMD6N02R2G, but differs in channel type and voltage ratings. The series is designed for general-purpose power switching in consumer and industrial electronics.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Consult official cross-reference guides or distributor databases for verified alternatives matching the 20 V, 6 A, SOIC-8 specification.

NTMD6P02R2GNTMD6P02R2G
$1.55
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