NTMFD020N06CT1G

FET, MOSFET Arrays Overview

The NTMFD020N06CT1G is a dual N-channel power MOSFET from onsemi, housed in a compact DFN8 5x6 (SO8FL) package. It features a 60 V drain-to-source voltage rating and a continuous drain current of 27 A at TC = 25°C. The device achieves a low on-resistance of 20.3 mΩ at VGS = 10 V and ID = 4 A. Key electrical parameters include a total gate charge of 5.8 nC, input capacitance of 355 pF, and reverse recovery time of 24 ns. Operating junction temperature ranges from -55°C to +175°C.

FET, MOSFET Arrays Feature Summary

• Dual configuration within a small footprint for space-constrained designs
• Low on-resistance minimizes conduction losses
• Reduced gate charge and capacitance lower driver losses

FET, MOSFET Arrays Applications

• Power tools
• Battery operated vacuums
• UAV/drones
• Material handling equipment
• BMS/storage systems

FET, MOSFET Arrays Procurement Notes

Verify the ordering suffix T1G corresponds to tape and reel packaging with 1,500 units per reel as specified in the datasheet. Confirm RoHS compliance and Pb-free status during procurement. Ensure thermal management aligns with the stated junction-to-case resistance of 4.8 °C/W for steady-state operation.

FET, MOSFET Arrays Selection Notes

Select this component when a dual N-channel MOSFET is required in a SO8FL package. The 60 V rating suits low-voltage DC applications. Evaluate thermal performance against the 47 °C/W junction-to-ambient resistance if heatsinking is not utilized. Verify that the 27 A continuous current rating meets load requirements under specific case temperature conditions.

FET, MOSFET Arrays Part Context

This part belongs to onsemi's dual MOSFET portfolio designed for high-density power applications. The NTMFD020N06C variant utilizes the CASE 506BT mechanical outline. It serves as an integrated solution for half-bridge or synchronous rectifier topologies where board space is limited compared to discrete single MOSFET arrangements.

FET, MOSFET Arrays Replacement Considerations

Check for direct pin-compatible alternatives with similar RDS(on) and voltage ratings. Verify that any substitute maintains the DFN8 5x6 package dimensions and thermal characteristics. Ensure gate charge and capacitance values are comparable to maintain switching speed compatibility.