NTMFD030N06CT1G

FET, MOSFET Arrays Overview

The NTMFD030N06CT1G is a dual N-channel power MOSFET in a DFN8 5x6 (SO8FL) package. It features a 60 V drain-to-source voltage rating and a maximum continuous drain current of 19 A at TC = 25 °C. The device exhibits a typical on-resistance (RDS(on)) of 29.7 mΩ at VGS = 10 V and ID = 3 A. Key electrical parameters include a total gate charge (QG) of 4.7 nC, input capacitance (CISS) of 255 pF, and reverse recovery time (tRR) of 21 ns. Thermal resistance from junction to case is 6.3 °C/W, supporting efficient heat dissipation in compact designs.

FET, MOSFET Arrays Feature Summary

• Dual N-Channel configuration within a small 5x6 mm footprint for space-constrained applications
• Low RDS(on) minimizes conduction losses during steady-state operation
• Reduced gate charge and capacitance values lower driver switching losses
• Compliant with Pb-Free, Halogen-Free, and BFR-Free standards

FET, MOSFET Arrays Applications

• Power tools and battery-operated vacuums
• UAVs, drones, and material handling equipment
• Battery management systems (BMS) and energy storage
• Home automation control circuits

FET, MOSFET Arrays Procurement Notes

Verify the ordering suffix T1G corresponds to the 1500-unit tape and reel packaging format specified in the datasheet. Confirm that the component meets RoHS compliance requirements for your specific manufacturing region. Ensure the SO8FL package dimensions align with your PCB footprint design guidelines before finalizing procurement orders.

FET, MOSFET Arrays Selection Notes

Select this component when a dual switch solution is required in a minimal board area. The 60 V rating suits low-voltage DC systems. Evaluate thermal performance using the 6.3 °C/W junction-to-case resistance for your specific PCB copper pad layout. Verify that the 19 A continuous current rating meets peak load demands under your operating temperature conditions.

FET, MOSFET Arrays Part Context

This part belongs to onsemi's dual MOSFET family designed for high-density power switching. The SO8FL package offers a smaller footprint compared to traditional SO-8 packages while maintaining similar thermal characteristics. It serves as an integrated alternative to discrete single-channel MOSFETs, reducing component count and assembly complexity in dual-switch topologies.

FET, MOSFET Arrays Replacement Considerations

Consult official cross-reference lists for verified substitutes. Ensure any replacement maintains the 60 V VDS rating, dual channel architecture, and compatible SO8FL mechanical outline. Verify that electrical parameters such as RDS(on) and QG do not degrade system performance if substituted.