NTMFD4C88NT1G

$1.60

Description：MOSFET 2N-CH 30V 11.7A 8DFN
Series：-

SKU:2ed0aff66a9f Category: FET, MOSFET Arrays Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 30V 11.7A 8DFN
Series：-
Mfr：onsemi
Package：Tape & Reel (TR),Bulk
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual) Asymmetrical
FET Feature：-
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：11.7A, 14.2A
Rds On (Max) @ Id, Vgs：5.4mOhm @ 10A, 10V
Vgs(th) (Max) @ Id：2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：22.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：1252pF @ 15V
Power - Max：1.1W
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-PowerTDFN
Supplier Device Package：8-DFN (5x6)
Grade：-
Qualification：-

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NTMFD4C88NT1G

Overview

The NTMFD4C88NT1G is a PowerPhase dual N-channel MOSFET in an SO8FL (DFN8) package. It integrates a high-side FET (Q1) and a low-side FET (Q2). Q1 offers a maximum Rds(on) of 5.4 mΩ at Vgs=10V and 8.1 mΩ at Vgs=4.5V, with a continuous drain current of 15.4 A at 25°C. Q2 provides a maximum Rds(on) of 4.4 mΩ at Vgs=10V and 6.0 mΩ at Vgs=4.5V, supporting 18.7 A continuous drain current at 25°C. Both devices feature a 30 V drain-source breakdown voltage. The component operates within a junction temperature range of -55°C to +150°C.

Feature Summary

Co-packaged power stage solution designed to minimize board space and parasitic inductances.
Optimized device architecture intended to reduce overall power losses in switching applications.

Applications

DC-DC Converters
System Voltage Rails
Point of Load

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging details. The NTMFD4C88NT1G variant is supplied in tape and reel format with a quantity of 1500 units per reel. Confirm compliance requirements such as RoHS status directly from the manufacturer's datasheet before finalizing procurement specifications.

Selection Notes

Select this component for designs requiring a compact dual-N-channel configuration with minimized parasitic inductance. Ensure the gate drive voltage meets the threshold requirements for the desired on-resistance levels. Verify thermal management capabilities based on the specified junction-to-ambient resistance values for the target PCB copper area.

Part Context

This part belongs to the PowerPhase series by onsemi, which focuses on integrated dual-FET solutions. It utilizes the DFN8 (CASE 506CR) package to provide a small footprint suitable for dense PCB layouts. The series aims to simplify half-bridge driver implementation by combining complementary FETs into a single component.

Replacement Considerations

Consult official substitution guides for verified alternatives. Generic cross-references may not match the specific co-packaged topology or parasitic characteristics required for this application.

How to buy

Online and offline orders are supported. If the item is available for online purchase, you can place it in the cart; for wholesale pricing, please contact our product manager for a quote.

Payment Method

Payment methods: T/T, WeChat Pay, credit cards, Google Pay, Apple Pay . Buyer covers shipping, fees, duties, and taxes; contact our product manager if you need a contract/procurement process.

Delivery time

In-stock items usually ship within 24 hours. Otherwise, shipment is arranged 1 to 2 days after the items arrive at our warehouse. Timing depends on destination and shipping method.

Freight calculation

Freight cost depends on destination, package size, and weight . We offer shipping options via DHL, FedEx, UPS, and TNT , and can ship using your freight account upon request.

Mode of Transportation

We ship via DHL, FedEx, UPS, and TNT. If you prefer a specific logistics provider, we can ship using your designated carrier.

Return and Refund

Returns are accepted within 60 days of invoice with RMA approval. Items must be resalable; original invoice and test report are required. No returns for customer errors.