NTMFD5C650NLT1G

FET, MOSFET Arrays Overview

The onsemi NTMFD5C650NLT1G is a dual N-channel enhancement-mode power MOSFET designed for surface-mount applications. It features a maximum drain-source voltage (Vds) of 60 V and a continuous drain current (Id) of 111 A at case temperature. The device utilizes an 8-lead DFN package with dimensions of 6.1 mm in length, 5 mm in width, and 1.05 mm in height. Key electrical parameters include a maximum drain-source on-resistance (Rds(on)) of 5.8 mΩ at Vgs = 4.5 V and Id = 20 A, and a typical gate charge (Qg) of 16 nC at Vgs = 4.5 V. It operates within a junction temperature range of -55°C to 175°C and supports a maximum power dissipation of 125 W at case temperature.

FET, MOSFET Arrays Feature Summary

• Dual N-channel configuration integrated into a compact 8-lead Power TDFN package for space-constrained designs.
• Low on-resistance characteristics to minimize conduction losses in high-current applications.
• Optimized gate charge and capacitance values to reduce switching losses and drive requirements.
• AEC-Q101 qualified for automotive reliability standards with PPAP capability.

FET, MOSFET Arrays Applications

• Automotive power distribution systems requiring high current handling and low loss.
• DC-DC converter circuits in electric vehicle charging infrastructure.
• Motor control applications utilizing synchronous rectification techniques.

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix to ensure the correct tape and reel quantity matches production needs. Confirm that the component meets RoHS and REACH compliance requirements for the target market. Check for any recent lifecycle status updates from onsemi to ensure long-term availability for manufacturing. Validate that the package dimensions align with the PCB footprint design rules.

FET, MOSFET Arrays Selection Notes

Select this component when a dual N-channel MOSFET with 60 V rating and high current capacity is required. Ensure the thermal management solution can handle the specified power dissipation limits. Compare gate charge specifications against available driver capabilities to optimize switching performance. Verify that the package type fits within the mechanical constraints of the enclosure.

FET, MOSFET Arrays Part Context

This part belongs to the NVMFD5C650NL series from onsemi, which focuses on low-loss power solutions. The series is engineered for automotive and industrial applications demanding high efficiency. It shares architectural similarities with other devices in the same voltage class but offers specific current ratings and packaging options tailored for dense PCB layouts.

FET, MOSFET Arrays Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Evaluate alternative dual N-channel MOSFETs with similar 60 V ratings and comparable Rds(on) values if sourcing issues arise. Ensure any replacement maintains the same package outline and pinout compatibility.