NTMFD6H852NLT1G

Overview

The NTMFD6H852NLT1G is a dual N-channel power MOSFET from onsemi, housed in a DFN8 (SO8FL-Dual) package measuring 5x6 mm. It features an 80 V drain-to-source voltage rating and supports a continuous drain current of 25 A at TC = 25°C. The device exhibits a low on-resistance of 25.5 mΩ at VGS = 10 V and 31.5 mΩ at VGS = 4.5 V. Total gate charge is 10 nC at VGS = 10 V. Thermal resistance from junction to case is 3.95 °C/W. Operating junction temperature ranges from -55°C to +175°C.

Feature Summary

• Dual N-Channel Configuration
• Small Footprint for Compact Design
• Low On-Resistance
• Low Gate Charge

Applications

• Power Management Systems
• Motor Control Applications
• DC-DC Converters

Procurement Notes

Verify the ordering suffix T1G corresponds to tape and reel packaging containing 1500 units per reel. Confirm that the component meets Pb-Free and RoHS compliance standards as specified in the datasheet. Ensure the specific lot traceability codes match project requirements before finalizing procurement.

Selection Notes

Select this component when space constraints require a 5x6 mm dual MOSFET solution. Evaluate thermal performance based on the 3.95 °C/W junction-to-case resistance. Verify that the 80 V breakdown voltage and 25 A current ratings align with the circuit's maximum operating conditions.

Part Context

This part belongs to the NTMFD6H852NL series of dual N-channel MOSFETs. It shares the same electrical characteristics and package outline as the non-tape variant but differs in shipping configuration. The series is designed for high-density power applications requiring compact footprints.

Replacement Considerations

Direct substitutes within the same family include variants with different packaging options such as the standard tube version. Cross-referencing with other 80V dual N-channel MOSFETs requires verifying pin compatibility and thermal resistance values.