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Product Detailed Parameters
- Description：MOSFET 2N-CH 20V 0.22A SOT963
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：220mA (Ta)
- Rds On (Max) @ Id, Vgs：1.5Ohm @ 100mA, 4.5V
- Vgs(th) (Max) @ Id：1V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：12.5pF @ 15V
- Power - Max：125mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-963
- Supplier Device Package：SOT-963
- Grade：-
- Qualification：-
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Overview
The NTUD3174NZT5G is a dual N-channel small signal MOSFET manufactured by onsemi. It features a 20 V drain-to-source voltage rating and a continuous drain current of 220 mA at 25°C. The device utilizes the SOT-963 package, measuring 1.0 mm x 1.0 mm with a thickness under 0.5 mm. Key electrical parameters include a maximum RDS(ON) of 1.5 Ω at VGS = 4.5 V and ID = 100 mA, and a gate threshold voltage (VGS(TH)) ranging from 0.52 V to 1.0 V at ID = 100 µA. Switching characteristics at VGS = 4.5 V show a turn-on delay time of 16.5 ns and a fall time of 80 ns. The operating junction temperature range spans from -55°C to +150°C.
Feature Summary
- Dual N-channel configuration in an ultra-small 1.0 mm x 1.0 mm SOT-963 package
- Low on-resistance solution optimized for portable electronics
- Ultra-thin profile allows integration into extremely thin environments
- Capable of operation with low gate voltage ratings
Applications
- General purpose interfacing switch
- Power management in ultra-portable equipment
- Analog switching applications
Procurement Notes
Verify component authenticity through official manufacturer channels or authorized distributors. Confirm RoHS compliance status and Pb-free packaging details against the latest datasheet revisions. Ensure ordering suffixes match specific tape and reel requirements for automated assembly processes.
Selection Notes
Select this component when space constraints require a 1.0 mm x 1.0 mm footprint. Evaluate RDS(ON) performance at specific gate drive voltages relevant to the application logic levels. Consider thermal resistance limits for steady-state and pulsed current conditions within the specified ambient temperature range.
Part Context
This part belongs to the NTUD3174NZ series of small signal MOSFETs designed for low-voltage, high-density surface mount applications. It serves as a compact alternative to larger packages while maintaining necessary switching speeds and current handling capabilities for portable consumer electronics.
Replacement Considerations
Direct substitutes must match the SOT-963 package, 20 V rating, and dual N-channel topology. Verify pinout compatibility and electrical parameters such as RDS(ON) and VGS(TH) before implementation.
