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Product Detailed Parameters
- Description：MOSFET N/P-CH 20V 0.54A SOT563
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：540mA, 430mA
- Rds On (Max) @ Id, Vgs：550mOhm @ 540mA, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：2.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：72pF @ 16V
- Power - Max：250mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-563, SOT-666
- Supplier Device Package：SOT-563
- Grade：-
- Qualification：-
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Overview
The NTZD3156CT2G is a dual N/P-channel enhancement mode MOSFET array manufactured by onsemi. It is housed in a surface-mount SOT-563 package with six pins. The device features a maximum drain-source voltage of 20 V. Continuous drain current ratings are specified at 450 mA for the N-channel and 570 mA for the P-channel. The maximum on-resistance values are 2 Ω for the N-channel and 900 mΩ for the P-channel. The gate threshold voltage reaches a maximum of 1 V. Maximum power dissipation is rated at 280 mW, with an operating temperature range from -55 °C to +150 °C.
Feature Summary
- Dual configuration integrating one N-channel and one P-channel transistor within a single compact package.
- Enhancement mode operation designed for low-voltage switching applications.
- Surface-mount construction utilizing the SOT-563 footprint for automated assembly.
Applications
- Battery protection circuits
- Load switches
- Power management modules
Procurement Notes
Verify the specific suffix 'CT2G' against official manufacturer documentation to confirm tape and reel packaging specifications. Ensure the component meets RoHS compliance standards as indicated by the 'G' suffix. Cross-reference the part number with authorized distributors to validate authenticity and traceability before procurement.
Selection Notes
Select this component when a compact dual-switch solution is required for low-voltage systems. Verify that the 20 V rating aligns with the system's maximum supply voltage. Confirm that the thermal dissipation capabilities of the SOT-563 package are sufficient for the intended duty cycle and ambient temperature conditions.
Part Context
This part belongs to onsemi's portfolio of small-signal MOSFET arrays. It serves as a discrete alternative to integrated load switch ICs, offering flexibility in circuit design. The SOT-563 package allows for space-constrained designs common in portable electronics and mobile devices.
Replacement Considerations
Consult official substitution guides for verified equivalents. Generic cross-references may not match the specific electrical characteristics or pinout configuration of the NTZD3156CT2G.
