NV6513-RA

Overview

The NV6513-RA is a GANfast single half-bridge integrated circuit from Navitas Semiconductor, designed for high-efficiency power conversion. It features a 650V breakdown voltage and an on-resistance of 300mΩ within a PQFN 5x6mm package. The device operates over a temperature range of -40°C to +125°C and supports SMD/SMT installation.

Feature Summary

• Integrates GaN Fast technology for enhanced switching performance
• Includes built-in gate drive functionality for simplified control
• Utilizes compact PQFN packaging for space-constrained designs

Applications

• AC-DC power adapters
• Server and data center power supplies
• Battery chargers

Procurement Notes

Verify the specific suffix 'RA' against the manufacturer's official documentation to confirm the exact reel configuration and tape-and-reel specifications. Ensure compatibility with the intended PCB footprint and thermal management requirements before finalizing procurement orders.

Selection Notes

Select this component when a 650V rating and low on-resistance are required for high-density power applications. Consider the integrated gate drive capabilities to reduce external component count and simplify the overall system design compared to discrete solutions.

Part Context

This part belongs to the GANfast series, which combines Gallium Nitride (GaN) transistors with proprietary gate drivers. This integration allows for faster switching speeds and higher power densities compared to traditional silicon-based MOSFETs in similar voltage classes.

Replacement Considerations

Consult official cross-reference lists for verified substitutes. Generic replacements may lack the specific integrated gate drive characteristics or thermal performance of the original component.