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Product Detailed Parameters
- Description：MOSFET 2N-CH 40V 14A 5DPAK
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Tape & Reel (TR),Bulk
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual) Common Drain
- FET Feature：-
- Drain to Source Voltage (Vdss)：40V
- Current - Continuous Drain (Id) @ 25°C：14A
- Rds On (Max) @ Id, Vgs：10mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：41nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：2103pF @ 25V
- Power - Max：3.8W
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-252-5, DPAK (4 Leads + Tab), TO-252AD
- Supplier Device Package：DPAK-5
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The NVDD5894NLT4G is a dual N-channel Power MOSFET from onsemi, housed in a DPAK-5L (Case 175AA) package. It features a 40 V drain-to-source voltage rating and a maximum continuous drain current of 64 A at TC = 25°C. The device specifies a low RDS(on) of 10 mΩ at VGS = 10 V and 14.5 mΩ at VGS = 4.5 V. Key electrical parameters include a gate threshold voltage of 1.5 to 2.5 V, total gate charge of 21 nC at VGS = 4.5 V, and an avalanche energy rating of 94 mJ. Thermal resistance is 2.0 °C/W junction-to-case and 40 °C/W junction-to-ambient.
Feature Summary
- Dual N-channel configuration with specified avalanche energy for transient overvoltage robustness
- AEC-Q101 qualified and PPAP capable for automotive reliability requirements
- Low on-resistance design to minimize conduction losses and improve efficiency
Applications
- Motor drivers
- Pump drivers for automotive braking systems
- High current steering systems
Procurement Notes
Verify the specific ordering suffix T4G corresponds to the tape and reel packaging quantity of 2500 units as documented in the datasheet. Confirm that the component meets RoHS compliance standards and is lead-free before finalizing procurement specifications for production integration.
Selection Notes
Select this component when a compact dual N-channel solution is required for 40 V applications. Ensure the thermal management design accounts for the 40 °C/W junction-to-ambient resistance on standard FR4 boards. Verify that the gate drive voltage supports the specified RDS(on) performance at either 4.5 V or 10 V logic levels.
Part Context
This part belongs to the NVDD5894NL family of dual power MOSFETs manufactured by onsemi. It utilizes the DPAK-5L surface-mount package designed for high-current density applications. The device is engineered to provide integrated switching capabilities within a single footprint, reducing board space compared to discrete single-channel alternatives.
Replacement Considerations
Direct substitutes must match the 40 V rating, dual N-channel topology, and DPAK-5L package. Verify equivalent RDS(on) and current handling capabilities. Cross-reference AEC-Q101 qualification status if the application requires automotive-grade certification.
