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Product Detailed Parameters
- Description：MOSFET 2N-CH 60V 0.295A SC88
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：295mA
- Rds On (Max) @ Id, Vgs：1.6Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.9nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：26pF @ 20V
- Power - Max：250mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-TSSOP, SC-88, SOT-363
- Supplier Device Package：SC-88/SC70-6/SOT-363
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The NVJD5121NT1G is a dual N-channel RF MOSFET transistor manufactured by onsemi. It utilizes silicon technology and is housed in an SC-88 surface-mount package. The device features a drain-source voltage rating of 60V and a continuous drain current of 295mA. Its on-resistance is specified at 1.6 ohms. This component is classified as an RF power MOSFET within the NVJD5121N series, designed for radio frequency applications requiring compact packaging and specific electrical characteristics.
Feature Summary
- Dual N-channel configuration integrated into a single compact package
- Optimized for radio frequency power switching applications
- Utilizes silicon-based semiconductor technology
Applications
- RF power amplification circuits
- Radio frequency signal switching
- Compact RF module integration
Procurement Notes
Verify the exact part number NVJD5121NT1G against official onsemi documentation to ensure compatibility with design requirements. Confirm that the SC-88 package dimensions and pinout match the PCB layout specifications. Check RoHS compliance status through the manufacturer's datasheet or certification documents before finalizing procurement decisions for production use.
Selection Notes
Select this component when a dual N-channel RF MOSFET with a 60V rating and low current capacity is required. The 1.6 ohm on-resistance and 295mA current limit define its operational boundaries. Ensure the application operates within the specified voltage and current parameters to maintain reliability and performance standards defined by the manufacturer.
Part Context
This component belongs to the NVJD5121N series from onsemi, which focuses on RF MOSFET transistors. It shares the series designation with related parts like NTJD5121NT1G, indicating a family of devices designed for similar radio frequency functions. The series emphasizes compact form factors suitable for modern electronic designs requiring integrated dual-channel solutions.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source material. Verify cross-references using official manufacturer substitution guides or distributor databases to identify compatible alternatives if necessary.
