NVJD5121NT2G

Overview

The NVJD5121NT2G is a dual N-channel power MOSFET from onsemi, housed in an SC-88 (SOT-363) package. It features a 60 V drain-to-source voltage rating and supports a continuous drain current of 295 mA at 25°C. The device includes ESD protection for the gate terminal, rated at 2000 V via HBM. Electrical characteristics specify a maximum RDS(on) of 1.6 Ω at VGS = 10 V and 2.5 Ω at VGS = 4.5 V. The component is AEC-Q101 qualified and PPAP capable, indicated by the NVJD prefix.

Feature Summary

• Dual N-channel configuration with integrated ESD protection
• AEC-Q101 qualification and PPAP capability for automotive applications
• Low on-resistance and low gate threshold voltage design

Applications

• Low side load switching
• DC-DC converters including buck and boost circuits

Procurement Notes

Verify the specific ordering suffix to confirm packaging details. The NT2G suffix indicates a tape and reel quantity of 3000 units. Ensure the NVJD prefix is selected when unique site or control change requirements are necessary for the target application.

Selection Notes

Select this component for space-constrained designs requiring dual N-channel MOSFETs in an SC-88 package. Consider the 60 V breakdown voltage and 295 mA continuous current limits. Verify that the gate drive voltage meets the requirements for the desired RDS(on) performance level.

Part Context

This part belongs to the NVJD series of dual N-channel MOSFETs manufactured by onsemi. The NVJD prefix specifically denotes parts qualified to AEC-Q101 standards and capable of PPAP submission, distinguishing them from standard commercial variants like the NTJD series.

Replacement Considerations

The NTJD5121NT2G is a non-automotive equivalent with identical electrical specifications but lacks the NVJD prefix qualifications. Other dual N-channel MOSFETs in SOT-363 packages may serve as alternatives if pinout and voltage ratings match.