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The NVLUD4C26NTAG is a dual N-channel MOSFET from onsemi, housed in a UDFN6 package measuring 2.0 x 2.0 x 0.55 mm with exposed drain pads for thermal conduction. It features an AEC-Q101 qualification and RoHS compliance. Key electrical parameters include a Drain-to-Source Voltage (VDSS) of 30 V and a Gate-to-Source Voltage (VGS) of ±12 V. The device supports a continuous drain current (ID) of 7.3 A at TA = 25°C and a pulsed drain current (IDM) of 22 A. On-resistance (RDS(on)) ranges from 17.5 mΩ to 65 mΩ depending on gate voltage and current conditions. Thermal resistance (RθJA) is 73.6 °C/W steady-state on FR4 boards.
Verify the specific ordering suffix 'TAG' corresponds to the tape and reel packaging format containing 3000 units per reel. Confirm that the component meets Pb-Free and Halogen Free/BFR Free requirements as stated in the datasheet. Ensure compatibility with RoHS compliance standards before finalizing procurement specifications for manufacturing integration.
Select this component when a compact dual N-channel solution is required for 30 V applications. Evaluate the thermal performance based on the specific copper pad area used on the PCB, as RθJA varies significantly between minimum and standard pad sizes. Consider the gate threshold voltage range and total gate charge values to ensure compatibility with the intended driver circuitry and switching frequency requirements.
This part belongs to onsemi's /C0109Cool series of power MOSFETs, which are engineered for high efficiency and thermal management. The UDFN6 package provides a small footprint suitable for dense PCB layouts. The dual configuration allows for independent control or parallel operation to handle higher currents in compact designs.
Public confirmed substitute part numbers are not available in the provided documentation. Verify pinout compatibility and electrical parameter overlaps if considering alternative manufacturers. Ensure any replacement maintains the same UDFN6 package dimensions and thermal characteristics for direct board substitution.