NVLUD4C26NTAG

NVLUD4C26NTAG

  • Description:MOSFET 2N-CH 30V 4.8A 6UDFN
  • Series:-

SKU:ee6f1f5248f8 Category: Brand:

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Product Detailed Parameters

  • Description:MOSFET 2N-CH 30V 4.8A 6UDFN
  • Series:-
  • Mfr:onsemi
  • Package:Bulk
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel
  • FET Feature:-
  • Drain to Source Voltage (Vdss):30V
  • Current - Continuous Drain (Id) @ 25°C:4.8A (Ta)
  • Rds On (Max) @ Id, Vgs:21mOhm @ 6A, 10V
  • Vgs(th) (Max) @ Id:1.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:9nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds:460pF @ 15V
  • Power - Max:720mW (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:6-UDFN Exposed Pad
  • Supplier Device Package:6-UDFN (2x2)
  • Grade:Automotive
  • Qualification:AEC-Q101

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NVLUD4C26NTAG

Overview

The NVLUD4C26NTAG is a dual N-channel MOSFET from onsemi, housed in a UDFN6 package measuring 2.0 x 2.0 x 0.55 mm with exposed drain pads for thermal conduction. It features an AEC-Q101 qualification and RoHS compliance. Key electrical parameters include a Drain-to-Source Voltage (VDSS) of 30 V and a Gate-to-Source Voltage (VGS) of ±12 V. The device supports a continuous drain current (ID) of 7.3 A at TA = 25°C and a pulsed drain current (IDM) of 22 A. On-resistance (RDS(on)) ranges from 17.5 mΩ to 65 mΩ depending on gate voltage and current conditions. Thermal resistance (RθJA) is 73.6 °C/W steady-state on FR4 boards.

Feature Summary

  • Dual N-channel configuration within a low-profile UDFN package designed for board space saving.
  • Exposed drain pads facilitate excellent thermal conduction capabilities.
  • Ultra-low RDS(on) characteristics optimized for efficient power switching.
  • Qualified under AEC-Q101 standards and capable of PPAP requirements.

Applications

  • Power Load Switch
  • Wireless Charging Systems
  • DC-DC Converters

Procurement Notes

Verify the specific ordering suffix 'TAG' corresponds to the tape and reel packaging format containing 3000 units per reel. Confirm that the component meets Pb-Free and Halogen Free/BFR Free requirements as stated in the datasheet. Ensure compatibility with RoHS compliance standards before finalizing procurement specifications for manufacturing integration.

Selection Notes

Select this component when a compact dual N-channel solution is required for 30 V applications. Evaluate the thermal performance based on the specific copper pad area used on the PCB, as RθJA varies significantly between minimum and standard pad sizes. Consider the gate threshold voltage range and total gate charge values to ensure compatibility with the intended driver circuitry and switching frequency requirements.

Part Context

This part belongs to onsemi's /C0109Cool series of power MOSFETs, which are engineered for high efficiency and thermal management. The UDFN6 package provides a small footprint suitable for dense PCB layouts. The dual configuration allows for independent control or parallel operation to handle higher currents in compact designs.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Verify pinout compatibility and electrical parameter overlaps if considering alternative manufacturers. Ensure any replacement maintains the same UDFN6 package dimensions and thermal characteristics for direct board substitution.

NVLUD4C26NTAGNVLUD4C26NTAG

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