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Product Detailed Parameters
- Description：MOSFET 2N-CH 100V 7.4A 8DFN
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：100V
- Current - Continuous Drain (Id) @ 25°C：7.4A (Ta), 28A (Tc)
- Rds On (Max) @ Id, Vgs：26mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id：3V @ 38µA
- Gate Charge (Qg) (Max) @ Vgs：11nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：720pF @ 50V
- Power - Max：3.1W (Ta), 46W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-PowerTDFN
- Supplier Device Package：8-DFN (5x6) Dual Flag (SO8FL-Dual)
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The NVMFD027N10MCLT1G is a dual N-channel power MOSFET from onsemi, housed in a DFN8 5x6 mm (SO8FL) package. It features a drain-to-source voltage of 100 V and a maximum continuous drain current of 28 A at TC = 25 °C. The device exhibits a low on-resistance of 26 mΩ at VGS = 10 V and 35 mΩ at VGS = 4.5 V. Total gate charge is 11 nC at VGS = 10 V. Thermal resistance from junction to case is 3.29 °C/W. Operating temperature ranges from -55 °C to +175 °C.
Feature Summary
- Dual N-Channel Configuration
- AEC-Q101 Qualified and PPAP Capable
- Small Footprint for Compact Design
Applications
- Automotive Electronics
- Power Management Systems
- Industrial Motor Control
Procurement Notes
Verify the specific ordering suffix T1G corresponds to the tape and reel packaging configuration with a quantity of 1500 units per reel. Confirm that the component meets RoHS compliance standards and is lead-free, halogen-free, and beryllium-free as specified in the manufacturer's documentation before finalizing procurement specifications.
Selection Notes
Select this component when a compact dual N-channel MOSFET solution is required for automotive or industrial applications. Ensure the design accommodates the 5x6 mm footprint and utilizes the exposed pad for thermal management. Verify that the gate drive voltage supports the specified RDS(on) performance levels under expected operating conditions.
Part Context
This part belongs to the NVMFD series of dual N-channel MOSFETs designed by onsemi. It shares the same electrical characteristics and package dimensions as the standard NVMFD027N10MCL but includes the T1G suffix indicating tape and reel shipping. The series targets high-efficiency power switching in space-constrained environments.
Replacement Considerations
The NVMFWD027N10MCLT1G serves as a direct functional replacement with wettable flank construction for enhanced optical inspection. Verify pinout compatibility and thermal resistance values when substituting with other dual N-channel MOSFETs in the 100V category.
