NVMFD5483NLT1G

Overview

The NVMFD5483NLT1G is a dual N-channel power MOSFET from onsemi, housed in a DFN8 5x6 mm (SO-8FL-Dual) surface-mount package. It features a drain-to-source voltage of 60 V and a continuous drain current of 24 A at TC = 25°C. The device exhibits a low on-resistance of 36 mΩ at VGS = 10 V and 45 mΩ at VGS = 4.5 V. Total gate charge is 23.4 nC at VGS = 10 V. Operating junction temperature ranges from -55°C to 175°C. Thermal resistance is 3.4 °C/W junction-to-case and 49 °C/W junction-to-ambient.

Feature Summary

• Small footprint design for compact applications
• Low on-resistance to minimize conduction losses
• Low capacitance to reduce driver losses
• AEC-Q101 qualified with PPAP capability

Applications

• Automotive electronics systems
• Power management circuits
• Motor drive applications

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging details. Confirm that the component meets all required environmental standards and automotive qualification criteria before integration into final designs.

Selection Notes

Select this component when a dual N-channel configuration is required within a constrained board area. Evaluate thermal performance based on the specific PCB copper pad size and ambient conditions to ensure operation remains within the 175°C maximum junction temperature limit.

Part Context

This part belongs to the NVMFD5483NL series of dual N-channel MOSFETs manufactured by onsemi. The series is designed for high-efficiency switching applications requiring robust performance in small form factors suitable for modern electronic assemblies.

Replacement Considerations

Check for compatible alternatives such as the NVMFD5483NLWFT1G variant which includes wettable flank options for enhanced optical inspection during manufacturing processes.