NVMFD5483NLT3G

Overview

The NVMFD5483NLT3G is a dual N-channel power MOSFET from onsemi, housed in a DFN8 (SO8FL-Dual) package measuring 5x6 mm. It features a drain-to-source voltage of 60 V and a maximum continuous drain current of 24 A at TC = 25°C. The device exhibits a low on-resistance of 36 mΩ at VGS = 10 V and 45 mΩ at VGS = 4.5 V. Key electrical parameters include a total gate charge of 23.4 nC at VGS = 10 V and an avalanche energy rating of 39 mJ. It supports an operating junction temperature up to 175°C and is qualified under AEC-Q101 standards.

Feature Summary

• Dual configuration within a compact 5x6 mm footprint for space-constrained designs
• Low on-resistance minimizes conduction losses across various gate drive voltages
• AEC-Q101 qualification with PPAP capability for automotive reliability requirements
• High thermal performance supporting operation up to 175°C junction temperature

Applications

• Automotive electronic systems requiring AEC-Q101 compliance
• Low-side load switching applications
• DC-DC converter circuits
• Motor control interfaces

Procurement Notes

Verify the specific ordering suffix 'T3G' corresponds to the 5000-unit tape and reel packaging format as defined in the manufacturer's documentation. Confirm that the component meets RoHS compliance and lead-free specifications required by your assembly process. Ensure the procurement channel provides valid traceability data consistent with the PPAP capabilities indicated for this automotive-grade series.

Selection Notes

Select this component when a dual N-channel topology is required in a small surface-mount package. The 60 V rating suits low-voltage automotive and industrial bus systems. Evaluate the 36 mΩ RDS(on) against your conduction loss targets at the intended operating current. Consider the 24 A continuous current limit relative to your thermal management strategy, noting that current capacity drops significantly at elevated ambient temperatures.

Part Context

This part belongs to the NVMFD5483NL family of dual power MOSFETs. Variants such as NVMFD5483NLWFT1G offer wettable flank options for enhanced inspection. All variants share the same core electrical characteristics and package dimensions, differing primarily in shipping quantities and specific marking configurations provided by the manufacturer.

Replacement Considerations

Direct substitutes must match the 60 V, dual N-channel specification and DFN8 5x6 mm footprint. Verify that any replacement maintains comparable RDS(on) values at both 10 V and 4.5 V gate drives to ensure circuit compatibility without redesigning the gate driver stage.