NVMFD5485NLT3G

Overview

The NVMFD5485NLT3G is a dual N-channel enhancement mode power MOSFET manufactured by onsemi. It features a maximum drain-source voltage (Vds) of 60 V and a continuous drain current (Id) of 22 A. The device has a typical on-resistance (Rds(on)) of 7.5 mΩ at Vgs = 10 V. It operates within a temperature range of -55°C to +175°C, with a total power dissipation of 3.8 W. The component is housed in an SO-8FL surface-mount package with 8 pins.

Feature Summary

• Dual configuration integrating two independent N-channel MOSFETs into a single compact package for space-constrained designs.
• Automotive qualification compliant with AEC-Q101 standards, ensuring reliability for demanding automotive environments.
• Enhanced thermal performance through the SO-8FL package design, supporting high junction temperatures up to 175°C.

Applications

• Automotive power distribution systems requiring robust switching capabilities.
• Low-side load switching applications in vehicle electronic control units.
• DC-DC converter circuits utilizing synchronous rectification techniques.

Procurement Notes

Verify the specific ordering suffix against official datasheets to confirm package type and tape-and-reel specifications. Confirm AEC-Q101 compliance status directly with manufacturer documentation prior to integration. Ensure supply chain stability as automotive components may experience allocation constraints.

Selection Notes

Select this component when a dual N-channel configuration is required for 60 V automotive applications. Compare Rds(on) and gate charge parameters against single-channel alternatives to optimize board space and switching losses. Validate thermal management requirements based on the 3.8 W power dissipation rating in the target enclosure.

Part Context

This part belongs to the NVMFD5 series of dual power MOSFETs from onsemi. The series focuses on automotive-grade reliability and low on-resistance for efficient power management. Similar parts in the lineup vary primarily in voltage ratings and current handling capabilities while maintaining the same SO-8FL footprint.

Replacement Considerations

Direct replacements include other AEC-Q101 qualified dual N-channel MOSFETs in SO-8FL packages with comparable 60 V and 22 A ratings. Verify pinout compatibility and thermal resistance values before substitution.