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The NVMFD5873NLWFT1G-UM is a dual N-channel MOSFET manufactured by onsemi. It features a 60V drain-source breakdown voltage and a continuous drain current of 58A. The device exhibits a maximum on-resistance of 13mΩ at VGS=10V. It operates within a temperature range of -55°C to +175°C junction temperature, with a power dissipation rating of 107W. The gate threshold voltage is 2.5V, and the total gate charge is 30.5nC. Packaged in an 8-DFN (5x6) Dual Flag configuration, it supports surface mount installation.
Verify the specific suffix 'UM' against official manufacturer documentation to confirm its exact meaning regarding packaging or quality grade. Ensure the ordering part number matches the required tape and reel specifications. Cross-reference the datasheet revision date to guarantee parameter accuracy during procurement.
Select this component when a dual N-channel configuration is required with a 60V voltage rating. The 13mΩ on-resistance makes it suitable for moderate current applications where efficiency is critical. Verify that the 58A current rating aligns with the system's peak load requirements and thermal management capabilities.
This device belongs to onsemi's NVMFD series of dual MOSFETs. These components are designed for automotive and industrial environments requiring robust performance. The series typically offers optimized trade-offs between on-resistance and gate charge for efficient switching.
Direct substitutes must match the 60V rating, dual N-channel topology, and compatible package dimensions. Verify electrical parameters such as RDS(on) and ID ratings before substitution. Consult the manufacturer's cross-reference guide for approved alternatives.