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The NVMFD5C466NLWFT1G is a dual N-channel power MOSFET manufactured by onsemi. It features a 40V drain-source voltage rating and supports a continuous drain current of 14A at ambient temperature or 52A at case temperature. The device exhibits a maximum on-resistance of 7.4mΩ at Vgs=10V and 12.6mΩ at Vgs=4.5V. Packaged in an 8-DFN (5x6mm) SO-8FL format with wettable flanks, it operates within a junction temperature range of -55°C to +175°C. The component holds AEC-Q101 automotive qualification and includes PPAP capability for manufacturing process approval.
Verify the specific suffix WFT1G against the manufacturer's official datasheet to confirm packaging details and reel specifications. Ensure that the procurement documentation explicitly references the AEC-Q101 qualification status and PPAP requirements if the application demands automotive compliance. Cross-reference the part number with the latest revision history to avoid obsolete stock.
Select this component when a dual N-channel topology is required within a constrained PCB area. The 5x6mm footprint allows for higher density compared to standard SO-8 packages. Consider the thermal resistance characteristics and the benefit of wettable flanks for automated assembly lines. Validate that the 40V rating aligns with the system's maximum operating voltage margins.
This device belongs to the NVMFD5 series of dual MOSFETs from onsemi. The series is engineered for applications demanding both electrical performance and physical compactness. The inclusion of wettable flanks distinguishes it from standard DFN variants by improving solder joint visibility during quality control processes.
Direct replacements must match the dual N-channel architecture, 40V rating, and 5x6mm DFN package dimensions. Verify pinout compatibility and thermal characteristics before substitution.