ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET 2N-CH 40V 14A 8DFN
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：40V
- Current - Continuous Drain (Id) @ 25°C：14A (Ta), 49A (Tc)
- Rds On (Max) @ Id, Vgs：8.1mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id：3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：11nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：650pF @ 25V
- Power - Max：3W (Ta), 38W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-PowerTDFN
- Supplier Device Package：8-DFN (5x6) Dual Flag (SO8FL-Dual)
- Grade：Automotive
- Qualification：AEC-Q101
Download product information
Overview
The onsemi NVMFD5C466NT1G is a dual N-channel MOSFET array housed in an 8-DFN (5x6 mm) PowerTDFN package. It features a 40V drain-source voltage rating and supports continuous drain currents of 14A at ambient temperature and 49A at case temperature. The device exhibits a maximum on-resistance of 8.1 mΩ at VGS=10V and ID=15A, with a total gate charge of 11 nC at VGS=10V. It operates within a junction temperature range of -55°C to +175°C and holds AEC-Q101 automotive qualification.
Feature Summary
- Dual N-channel configuration integrated into a compact 5x6 mm surface-mount footprint for space-constrained designs.
- Automotive-grade reliability certified under AEC-Q101 standards for harsh environment operation.
- Low on-resistance and gate charge characteristics designed to minimize conduction and switching losses.
Applications
- Automotive power management systems requiring AEC-Q101 compliance.
- Motor control circuits utilizing dual-channel topology.
- High-efficiency DC-DC converter stages in portable electronics.
Procurement Notes
Verify the specific ordering suffix against the manufacturer's current datasheet to confirm package variant and tape-and-reel specifications. Ensure component authenticity through authorized distribution channels to guarantee adherence to automotive quality standards and material declarations.
Selection Notes
Select this component when a dual N-channel topology is required within a 5x6 mm envelope. Evaluate thermal performance based on the specified 38W dissipation at case temperature versus 3W at ambient temperature. Confirm that the 40V voltage rating aligns with the system's maximum operating conditions.
Part Context
This part belongs to the NVMFD5 series of low-voltage dual MOSFETs from onsemi. The series targets applications demanding high current density in small packages. The NT1G suffix indicates standard tape-and-reel packaging suitable for automated surface-mount assembly processes.
Replacement Considerations
Direct substitutes include other 40V dual N-channel MOSFETs in 8-DFN 5x6mm packages from onsemi, such as the NVMFD5C462N or NVMFD5C466NL, provided pin compatibility and electrical parameters meet the design requirements.
