NVMFD5C470NT1G

Overview

The onsemi NVMFD5C470NT1G is a dual N-channel enhancement mode power MOSFET housed in an 8-lead DFN-8 surface-mount package. It features a drain-source breakdown voltage of 40 V and a continuous drain current of 36 A at case temperature. The device exhibits a maximum on-resistance of 11.5 mΩ, with a gate charge of 9 nC and a threshold voltage of 2.2 V. Operating temperatures range from -55°C to +175°C, supporting a power dissipation of 46 W.

Feature Summary

• Dual N-channel configuration for compact circuit integration
• Low on-resistance to minimize conduction losses
• Low gate charge for reduced switching energy
• DFN-8 package with thermal optimization

Applications

• DC-DC converter modules
• Power management integrated circuits (PMICs)
• Automotive electronic control units

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging format and tape-and-reel specifications. Ensure component authenticity through authorized distribution channels. Confirm RoHS compliance status and lead-free characteristics prior to final procurement decisions.

Selection Notes

Select this component for applications requiring low profile and high current density within a 40 V system. Evaluate thermal resistance requirements based on PCB copper area and ambient conditions. Compare gate charge values against driver capabilities to ensure efficient switching performance.

Part Context

This part belongs to the NVMFD5C4xxN series of dual MOSFETs designed for space-constrained environments. It shares the DFN-8 footprint family with variants offering different resistance and voltage ratings. The series targets automotive and industrial sectors demanding high reliability.

Replacement Considerations

Check pinout compatibility and thermal pad dimensions when substituting. Verify that alternative parts meet the 40 V rating and 11.5 mΩ maximum on-resistance constraints.