NVMFD5C672NLT1G

NVMFD5C672NLT1G

$2.28
  • Description:MOSFET 2N-CH 60V 12A 8DFN
  • Series:-

SKU:6db14b6732c4 Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET 2N-CH 60V 12A 8DFN
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual)
  • FET Feature:-
  • Drain to Source Voltage (Vdss):60V
  • Current - Continuous Drain (Id) @ 25°C:12A (Ta), 49A (Tc)
  • Rds On (Max) @ Id, Vgs:11.9mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id:2.2V @ 30µA
  • Gate Charge (Qg) (Max) @ Vgs:5.7nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds:793pF @ 25V
  • Power - Max:3.1W (Ta), 45W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-PowerTDFN
  • Supplier Device Package:8-DFN (5x6) Dual Flag (SO8FL-Dual)
  • Grade:Automotive
  • Qualification:AEC-Q101

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NVMFD5C672NLT1G

Overview

The NVMFD5C672NLT1G is a dual N-channel enhancement mode power MOSFET manufactured by onsemi. It features a SO-8FL-Dual-8 surface-mount package with an 8-pin configuration. Key electrical parameters include a drain-source breakdown voltage (Vds) of 60 V and a continuous drain current (Id) of 49 A at case temperature. The device exhibits a maximum on-resistance (Rds On) of 11.9 mΩ at 10 V gate drive. Gate characteristics specify a threshold voltage (Vgs th) of 2.2 V and a gate charge (Qg) of 5.7 nC. Power dissipation reaches 45 W at case temperature, operating within a junction temperature range of -55°C to +175°C. The component holds AEC-Q101 qualification for automotive reliability.

Feature Summary

  • Dual N-channel configuration in a compact 8-pin surface-mount package designed for space-constrained layouts.
  • Low on-resistance performance to minimize conduction losses and improve overall system efficiency.
  • AEC-Q101 qualified for enhanced reliability in demanding automotive electronic environments.

Applications

  • Automotive power distribution systems requiring high reliability and compact form factors.
  • DC-DC converter circuits utilizing low-voltage synchronous rectification.
  • Motor control applications involving low-voltage brushless DC motors.

Procurement Notes

Verify the specific ordering suffix and tape-and-reel quantity against official distributor catalogs before purchase. Confirm that the requested package variant matches the SO-8FL-Dual-8 specification. Ensure compliance with RoHS directives and REACH requirements for your target market. Check for any recent product change notices regarding pinout or material composition updates.

Selection Notes

Select this component when a dual N-channel topology is required within a small footprint. The 60V rating suits low-voltage automotive and industrial bus architectures. Evaluate thermal management needs based on the 45W case dissipation limit. Compare gate charge values against driver capabilities to ensure adequate switching speeds without excessive drive current demands.

Part Context

This part belongs to the NVMFD5C672NL series from onsemi, focusing on dual MOSFET solutions. It shares the SO-8FL-Dual-8 package family with variants like NVMFD5C672NLWFT1G. The series targets applications needing integrated dual-channel functionality to reduce board space compared to discrete single-channel implementations.

Replacement Considerations

Direct substitutes include other onsemi dual N-channel MOSFETs in the same package family, such as NVMFD5C672NLWFT1G. Verify pin compatibility and electrical ratings match before substitution. Cross-reference with similar packages from other manufacturers only if specifications align precisely.

NVMFD5C672NLT1GNVMFD5C672NLT1G
$2.28
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