NVMFWD040N10MCLT1G

Overview

The NVMFWD040N10MCLT1G is a dual N-channel Power MOSFET from onsemi, designed for high-efficiency power switching applications. It features a 100V drain-source voltage rating and a continuous drain current of 21A at case temperature. The device achieves a low on-resistance of 39 mΩ, contributing to reduced conduction losses. Packaged in an 8-DFN (5x6mm) surface-mount format, it supports operation across a wide temperature range from -55°C to +175°C junction temperature. Key electrical characteristics include a gate charge of 4 nC, fast rise and fall times of 1.7 ns and 3 ns respectively, and a maximum power dissipation of 36W.

Feature Summary

• Dual configuration integrates two independent N-channel MOSFETs within a single compact package to save board space.
• Low on-resistance minimizes conduction losses and improves overall system efficiency during steady-state operation.
• Fast switching speeds with low gate charge reduce dynamic switching losses and electromagnetic interference.

Applications

• Automotive power distribution systems requiring AEC-Q101 qualified components.
• DC-DC converter circuits for efficient voltage regulation.
• Motor control interfaces for driving small DC motors or solenoids.

Procurement Notes

Verify the specific ordering suffix LT1G to ensure correct reel packaging and tape-and-reel quantity specifications. Confirm that the 8-DFN footprint matches the target PCB design guidelines. Check for RoHS compliance status if environmental regulations apply to the final assembly. Ensure storage conditions adhere to moisture sensitivity level requirements before soldering.

Selection Notes

Select this component when a dual N-channel topology is required in a minimal footprint. Compare the 39 mΩ on-resistance against thermal constraints for the intended load current. Evaluate the 100V breakdown voltage against peak transient voltages in the circuit. Consider the 21A continuous current rating relative to the available cooling path and ambient temperature.

Part Context

This part belongs to the NVMFD040N10MCL series of automotive-grade MOSFETs. It shares the same die and package technology as other variants in the family but differs in specific electrical parameters like on-resistance and current handling. The dual configuration distinguishes it from single-channel counterparts in the same voltage class.

Replacement Considerations

Direct substitutes must match the 100V rating, dual N-channel configuration, and 8-DFN package. Verify equivalent on-resistance and gate charge values to maintain switching performance. Check pinout compatibility to ensure direct replacement without PCB redesign.