NVMJD036N10MCLTWG

Overview

The NVMJD036N10MCLTWG is a dual N-channel power MOSFET array from onsemi, designed for automotive and industrial applications. It features a 100V drain-source voltage (Vdss) and a maximum continuous drain current of 21A at case temperature (Tc) or 6.3A at ambient temperature (Ta). The device exhibits a low on-resistance (Rds(on)) of 36 mΩ at Vgs=10V and Id=5A. Total gate charge (Qg) is 7.4nC at Vgs=10V, with an input capacitance (Ciss) of 496pF at Vds=50V. Power dissipation reaches 36W at Tc and 3.2W at Ta. It operates within a junction temperature range of -55°C to 175°C and is housed in an 8-LFPAK surface-mount package.

Feature Summary

• Dual N-channel configuration integrated into a single compact package for space-efficient circuit design.
• Automotive-grade reliability certified under AEC-Q101 standards for harsh environment operation.
• Low on-resistance and gate charge characteristics to minimize conduction and switching losses.

Applications

• Automotive power distribution systems requiring high reliability and compact form factors.
• DC-DC converter circuits where efficient power conversion and thermal management are critical.
• Motor control applications utilizing dual-channel architectures for half-bridge configurations.

Procurement Notes

Verify component authenticity through authorized onsemi distributors or direct manufacturer channels. Confirm the specific suffix 'WG' corresponds to lead-free and halogen-free compliance requirements. Check current availability status as supply constraints may affect immediate procurement. Ensure storage conditions adhere to moisture sensitivity level guidelines prior to soldering.

Selection Notes

Select this component when a dual N-channel topology is required within a limited PCB area. The 100V rating suits low-voltage automotive and industrial bus systems. Evaluate thermal performance based on the LFPAK package's heat dissipation capabilities relative to the application's duty cycle. Ensure gate drive voltages align with the specified Rds(on) test conditions for optimal efficiency.

Part Context

This part belongs to onsemi's automotive-certified MOSFET portfolio, specifically targeting applications demanding robust performance in constrained spaces. The LFPAK56 package provides enhanced thermal conductivity compared to traditional SOT packages. It complements single-channel variants by offering integrated dual functionality without increasing board footprint.

Replacement Considerations

Direct substitutes must match the 100V/21A specifications and 8-LFPAK footprint. Verify pinout compatibility and electrical parameters such as Rds(on) and Qg. Consider thermal resistance differences if replacing with packages from other manufacturers. Ensure any alternative maintains AEC-Q101 certification for automotive use cases.