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Product Detailed Parameters
- Description：MOSFET N-CH 40V LFPACK57
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：-
- Configuration：-
- FET Feature：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
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Overview
The NVMJD3D0N04CTWG is a dual N-channel power MOSFET from onsemi, housed in an LFPAK8 (5x6 mm) package. It features a 40 V drain-to-source voltage rating and a maximum continuous drain current of 129 A at TC = 25°C. The device exhibits a low on-resistance of 2.9 mΩ at VGS = 10 V and ID = 50 A. Key electrical parameters include a total gate charge of 40 nC, input capacitance of 2540 pF, and reverse recovery time of 48.1 ns. It operates within a junction temperature range of -55°C to +175°C and meets AEC-Q101 qualification standards.
Feature Summary
- Dual configuration with small footprint for compact design
- Low RDS(on) to minimize conduction losses
- Low QG and capacitance to reduce driver losses
- AEC-Q101 qualified and PPAP capable
Applications
- Automotive power management systems
- High-current DC-DC converters
- Motor control applications
Procurement Notes
Verify the specific ordering suffix 'TWG' confirms lead-free status and tape-and-reel packaging quantity of 3000 units. Confirm that the component marking matches the datasheet diagram. Ensure compliance with RoHS directives and check for any recent PCN updates regarding manufacturing site changes or material substitutions before finalizing procurement orders.
Selection Notes
Select this component when a dual N-channel topology is required in a space-constrained environment. Evaluate thermal resistance values against the specific PCB copper pad area and duty cycle requirements. Verify that the gate drive voltage supports the specified RDS(on) performance and ensure the application current does not exceed the pulsed drain current limits under avalanche conditions.
Part Context
This part belongs to the NVMJD series of dual MOSFETs designed for automotive and industrial applications. It shares the LFPAK8 package form factor with other devices in the family but offers distinct electrical characteristics tailored for high-current switching. The dual configuration allows for efficient half-bridge or synchronous rectifier implementations.
Replacement Considerations
Direct replacement requires verifying pinout compatibility and electrical parameter equivalence. Check if alternative dual MOSFETs offer similar RDS(on) and QG values while fitting the LFPAK8 footprint. Ensure any substitute maintains AEC-Q101 qualification if used in automotive contexts.
