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The NVTJD4001NT1G is a dual N-channel small signal MOSFET in an SC-88 (SOT-363) package. It features a drain-to-source voltage of 30 V and a continuous drain current of 250 mA at 25 °C. The device has a maximum power dissipation of 272 mW and operates within a junction temperature range of -55 °C to 150 °C. Electrical characteristics include a typical on-resistance of 1.0 Ω at VGS = 4.0 V and 1.5 Ω at VGS = 2.5 V, with a total gate charge of 0.9 nC.
Verify the specific ordering suffix 'NT1G' corresponds to the tape and reel packaging configuration required for automated assembly processes. Confirm that the AEC-Q101 qualification status aligns with automotive reliability standards if the application environment demands it. Ensure the SC-88 package dimensions match the target PCB land pattern specifications.
Select this component when a compact dual N-channel solution is required for low-voltage logic interfacing or power management. The low gate charge supports efficient operation in high-frequency switching applications. Verify that the 30 V rating provides sufficient headroom for the specific circuit supply voltages and transient conditions encountered during normal operation.
This part belongs to the NTJD4001N family of dual N-channel MOSFETs manufactured by onsemi. The 'V' prefix indicates AEC-Q101 qualification for automotive applications. It serves as a space-efficient alternative to larger packages like TSOP-6 while maintaining comparable electrical performance for small-signal switching tasks.
Direct substitutes include the NTJD4001NT1G and NSTJD4001NT1G variants from the same manufacturer family.
Pin 1 is Source 1, Pin 2 is Gate 1, Pin 3 is Drain 2, Pin 4 is Source 2, Pin 5 is Gate 2, and Pin 6 is Drain 1.
Yes, the NVTJD4001N variant is qualified according to the AEC-Q101 standard.
The maximum pulsed drain current is 600 mA with a pulse width of 10 microseconds.