NVTJD4001NT1G

NVTJD4001NT1G

$0.37
  • Description:MOSFET 2N-CH 30V 0.25A SC88
  • Series:-

SKU:bd1c2006219c Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:MOSFET 2N-CH 30V 0.25A SC88
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual)
  • FET Feature:-
  • Drain to Source Voltage (Vdss):30V
  • Current - Continuous Drain (Id) @ 25°C:250mA
  • Rds On (Max) @ Id, Vgs:1.5Ohm @ 10mA, 4V
  • Vgs(th) (Max) @ Id:1.5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs:1.3nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds:33pF @ 5V
  • Power - Max:272mW
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:6-TSSOP, SC-88, SOT-363
  • Supplier Device Package:SC-88/SC70-6/SOT-363
  • Grade:Automotive
  • Qualification:AEC-Q101

Download product information

NVTJD4001NT1G

Overview

The NVTJD4001NT1G is a dual N-channel small signal MOSFET in an SC-88 (SOT-363) package. It features a drain-to-source voltage of 30 V and a continuous drain current of 250 mA at 25 °C. The device has a maximum power dissipation of 272 mW and operates within a junction temperature range of -55 °C to 150 °C. Electrical characteristics include a typical on-resistance of 1.0 Ω at VGS = 4.0 V and 1.5 Ω at VGS = 2.5 V, with a total gate charge of 0.9 nC.

Feature Summary

  • Low gate charge for fast switching
  • Small footprint, 30% smaller than TSOP-6
  • ESD protected gate
  • AEC-Q101 qualified

Applications

  • Low side load switch
  • Li-Ion battery supplied devices such as cell phones, PDAs, and digital still cameras
  • Buck converters
  • Level shifts

Procurement Notes

Verify the specific ordering suffix 'NT1G' corresponds to the tape and reel packaging configuration required for automated assembly processes. Confirm that the AEC-Q101 qualification status aligns with automotive reliability standards if the application environment demands it. Ensure the SC-88 package dimensions match the target PCB land pattern specifications.

Selection Notes

Select this component when a compact dual N-channel solution is required for low-voltage logic interfacing or power management. The low gate charge supports efficient operation in high-frequency switching applications. Verify that the 30 V rating provides sufficient headroom for the specific circuit supply voltages and transient conditions encountered during normal operation.

Part Context

This part belongs to the NTJD4001N family of dual N-channel MOSFETs manufactured by onsemi. The 'V' prefix indicates AEC-Q101 qualification for automotive applications. It serves as a space-efficient alternative to larger packages like TSOP-6 while maintaining comparable electrical performance for small-signal switching tasks.

Replacement Considerations

Direct substitutes include the NTJD4001NT1G and NSTJD4001NT1G variants from the same manufacturer family.

FAQ

What is the pinout configuration for the SC-88 package?

Pin 1 is Source 1, Pin 2 is Gate 1, Pin 3 is Drain 2, Pin 4 is Source 2, Pin 5 is Gate 2, and Pin 6 is Drain 1.

Is the NVTJD4001NT1G suitable for automotive applications?

Yes, the NVTJD4001N variant is qualified according to the AEC-Q101 standard.

What is the maximum pulsed drain current?

The maximum pulsed drain current is 600 mA with a pulse width of 10 microseconds.

NVTJD4001NT1GNVTJD4001NT1G
$0.37
Buy Now