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The NVVR26A120M1WST is a Silicon Carbide (SiC) half-bridge power module from onsemi's EliteSiC family, designed for traction inverters. It integrates two 1200 V SiC MOSFETs in an AHPM15-CDA package with single-side cooling. Key electrical parameters include a maximum drain-source voltage of 1200 V and a continuous DC current rating of 400 A at 175°C junction temperature. The typical on-state resistance (RDS(on)) is 2.6 mΩ at 25°C and 4.6 mΩ at 175°C. The module features ultra-low stray inductance of approximately 7.1 nH and utilizes sintering technology for die attach to enhance reliability.
Verify the specific ordering suffix 'WST' against the official datasheet to confirm terminal configuration and pinout compatibility. Ensure that the procurement documentation explicitly references AQG324 compliance and PPAP capability requirements if mandated by the automotive supply chain standards.
Select this module for applications requiring high power density and efficiency in electric vehicle traction drives. Consider the 175°C continuous operating junction temperature and the specific thermal resistance values when designing the cooling system. Verify gate drive requirements against the specified internal gate resistance and total gate charge parameters.
This component belongs to the EliteSiC power module series, which focuses on high-mobility compound semiconductor solutions. It shares the AHPM15-CDA mechanical footprint with other variants in the NVVR26A120M family, facilitating platform compatibility across different onsemi SiC product lines for automotive traction inverter designs.
Direct replacements within the same family include NVVR26A120M1WSS and NVVR26A120M1WSB. Verify that the alternative part number matches the required terminal configuration and pinout before substitution.