NVVR26A120M1WST

NVVR26A120M1WST

$325.16
  • Description:MOSFET 2N-CH 1200V AHPM15-CDA
  • Series:-

SKU:8c8b9110afd6 Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET 2N-CH 1200V AHPM15-CDA
  • Series:-
  • Mfr:onsemi
  • Package:Tube
  • Technology:Silicon Carbide (SiC)
  • Configuration:2 N-Channel (Half Bridge)
  • FET Feature:-
  • Drain to Source Voltage (Vdss):1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C:400A (Tj)
  • Rds On (Max) @ Id, Vgs:2.6mOhm @ 400A, 20V
  • Vgs(th) (Max) @ Id:3.2V @ 150mA
  • Gate Charge (Qg) (Max) @ Vgs:1.75µC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds:31700pF @ 800V
  • Power - Max:1kW (Tj)
  • Operating Temperature:-40°C ~ 175°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:15-PowerDIP Module (2.441", 62.00mm)
  • Supplier Device Package:AHPM15-CDA
  • Grade:Automotive
  • Qualification:AEC-Q101

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NVVR26A120M1WST

Overview

The NVVR26A120M1WST is a Silicon Carbide (SiC) half-bridge power module from onsemi's EliteSiC family, designed for traction inverters. It integrates two 1200 V SiC MOSFETs in an AHPM15-CDA package with single-side cooling. Key electrical parameters include a maximum drain-source voltage of 1200 V and a continuous DC current rating of 400 A at 175°C junction temperature. The typical on-state resistance (RDS(on)) is 2.6 mΩ at 25°C and 4.6 mΩ at 175°C. The module features ultra-low stray inductance of approximately 7.1 nH and utilizes sintering technology for die attach to enhance reliability.

Feature Summary

  • Integrates M1 SiC technology for high current density and robust short-circuit withstand capability
  • Utilizes Aluminum Nitride (AlN) isolated substrate for superior thermal conductivity and basic isolation
  • Employs sintered die technology for enhanced mechanical stability and thermal performance
  • Features ultra-low stray inductance design to minimize switching losses and voltage overshoot

Applications

  • Automotive EV/HEV Traction Inverter

Procurement Notes

Verify the specific ordering suffix 'WST' against the official datasheet to confirm terminal configuration and pinout compatibility. Ensure that the procurement documentation explicitly references AQG324 compliance and PPAP capability requirements if mandated by the automotive supply chain standards.

Selection Notes

Select this module for applications requiring high power density and efficiency in electric vehicle traction drives. Consider the 175°C continuous operating junction temperature and the specific thermal resistance values when designing the cooling system. Verify gate drive requirements against the specified internal gate resistance and total gate charge parameters.

Part Context

This component belongs to the EliteSiC power module series, which focuses on high-mobility compound semiconductor solutions. It shares the AHPM15-CDA mechanical footprint with other variants in the NVVR26A120M family, facilitating platform compatibility across different onsemi SiC product lines for automotive traction inverter designs.

Replacement Considerations

Direct replacements within the same family include NVVR26A120M1WSS and NVVR26A120M1WSB. Verify that the alternative part number matches the required terminal configuration and pinout before substitution.

NVVR26A120M1WSTNVVR26A120M1WST
$325.16
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