NVXK2VR40WXT2

Overview

The NVXK2VR40WXT2 is a Silicon Carbide (SiC) Power MOSFET module designed for 3-phase bridge applications in electric vehicles. It features a 1200 V drain-to-source voltage and a typical on-resistance of 40 mΩ at 25°C, supporting a continuous drain current of 55 A. The device integrates two NTC thermistors for thermal monitoring and operates within a junction temperature range of -55°C to 175°C. Packaged in the APM32 form factor, it meets automotive qualification standards including AEC-Q101 and AQG324, ensuring reliability for onboard charger systems.

Feature Summary

• DIP Silicon Carbide 3-Phase Bridge Power Module architecture optimized for compact design and low total module resistance.
• Integrated NTC thermistors providing full traceability through module serialization.
• Compliance with IEC 60664-1 and IEC 60950-1 standards for creepage and clearance distances.
• Automotive qualification per AEC-Q101 and AQG324 standards for xEV applications.

Applications

• On-Board Charger (OBC) for xEV Applications
• Power Factor Correction (PFC) for On-Board Charger in xEV Applications

Procurement Notes

Verify the specific ordering suffix XXT2 against the manufacturer's current documentation to ensure compatibility with required packaging and shipping configurations. Confirm that the APM32 package dimensions align with the target PCB layout constraints. Ensure that the thermal interface material specifications meet the requirements for the calculated thermal resistance values provided in the datasheet.

Selection Notes

Select this component when designing 3-phase inverters or rectifiers requiring high-voltage SiC performance in an automotive environment. The 1200 V rating provides sufficient headroom for 800 V battery architectures. Consider the 40 mΩ on-resistance for conduction loss calculations and verify that the gate drive circuitry supports the recommended +20/-5 V operating voltage range for optimal switching performance.

Part Context

This module belongs to onsemi's DIP Silicon Carbide product line, specifically engineered for high-efficiency power conversion in electric vehicles. The APM32 package offers a standardized footprint for 3-phase bridges, facilitating integration into existing EV powertrain designs while leveraging SiC technology for reduced switching losses compared to traditional silicon devices.

Replacement Considerations

Consult official cross-reference lists for direct replacements. Verify that any substitute maintains the same 1200 V rating, 3-phase configuration, and APM32 mechanical outline to ensure board compatibility without redesign.

FAQ

What is the maximum recommended gate-to-source voltage for operation?

The recommended operation value for gate-to-source voltage is +20 V for the positive swing and -5 V for the negative swing when the junction temperature is less than or equal to 175°C.

How many NTC thermistors are integrated into the module?

The NVXK2VR40WXT2 integrates two discrete NTC thermistors, labeled NTC1 and NTC2, which are 10 kΩ components with ±3% tolerance.

What is the typical turn-off switching loss under standard test conditions?

The typical turn-off switching loss (EOFF) is 200 µJ, measured at VGS = -5/20 V, VDS = 800 V, ID = 47 A, and RG = 4.7 Ω with an inductive load.