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Product Detailed Parameters
- Description：MOSFET 2N-CH 60V 0.17A 6TSSOP
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：170mA (Ta)
- Rds On (Max) @ Id, Vgs：4.5Ohm @ 170mA, 10V
- Vgs(th) (Max) @ Id：1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：1.4nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：20pF @ 30V
- Power - Max：325mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-TSSOP, SC-88, SOT-363
- Supplier Device Package：6-TSSOP
- Grade：-
- Qualification：-
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Overview
The NX138AKSX is a dual N-channel enhancement mode MOSFET array manufactured by Nexperia. It utilizes Trench MOSFET technology to achieve low threshold voltage and fast switching characteristics within a compact SOT-363 (SC-88) surface-mount package. The device features a drain-source breakdown voltage of 60 V and a continuous drain current rating of 170 mA at ambient temperature. Key electrical parameters include a maximum on-resistance of 4.5 Ohms at 10 V gate drive, a gate charge of 1.4 nC, and an input capacitance of 20 pF. It operates reliably across a junction temperature range of -55°C to +150°C with a power dissipation capacity of 325 mW.
Feature Summary
- Dual N-channel configuration in a small SOT-363 surface-mount package
- Trench MOSFET technology for low threshold voltage and fast switching
- Integrated electrostatic discharge protection
Applications
- Relay driver circuits
- High-speed line drivers
- Low-side load switches
- General switching circuits
Procurement Notes
Verify the specific suffix AKS against the official Nexperia datasheet to confirm the SOT-363 packaging and electrical specifications. Ensure compatibility with RoHS3 directives and check moisture sensitivity level classifications before integration. Confirm that the 6-TSSOP/SC-88 footprint matches the target PCB design requirements.
Selection Notes
Select this component for applications requiring dual N-channel switching in minimal space. The low gate charge and fast switching speeds make it suitable for high-frequency signal processing. Verify that the 60 V breakdown voltage and 170 mA current limits exceed the circuit's peak operational demands to ensure reliability under varying thermal conditions.
Part Context
This part belongs to the NX138 series of N-channel Trench MOSFETs from Nexperia. The series is designed for general-purpose switching applications where size and speed are critical constraints. The SOT-363 package variant offers a compact solution compared to larger discrete packages while maintaining robust performance characteristics.
Replacement Considerations
Direct substitutes may include other dual N-channel MOSFET arrays in SOT-363 packages with similar 60 V ratings. Verify pinout compatibility and electrical parameters such as Rds(on) and Vgs(th) when considering alternatives from different manufacturers.
