NX3008NBKV,115

$0.37

Description：MOSFET 2N-CH 30V 0.4A SOT666
Series：TrenchMOS™

SKU:bba54ac8f9b9 Category: FET, MOSFET Arrays Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 30V 0.4A SOT666
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：400mA
Rds On (Max) @ Id, Vgs：1.4Ohm @ 350mA, 4.5V
Vgs(th) (Max) @ Id：1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：0.68nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：50pF @ 15V
Power - Max：500mW
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：SOT-563, SOT-666
Supplier Device Package：SOT-666
Grade：Automotive
Qualification：AEC-Q101

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NX3008NBKV,115

Overview

The NX3008NBKV,115 is a dual N-channel enhancement mode Field-Effect Transistor utilizing Trench MOSFET technology. It is housed in an ultra-small and flat lead SOT666 Surface-Mounted Device plastic package with six leads. The device features a drain-source voltage rating of 30 V and a continuous drain current of 400 mA per transistor at 25 °C. Key electrical parameters include a maximum on-state resistance of 1.4 Ω at VGS = 4.5 V and a total gate charge of 0.68 nC. The component operates within a junction temperature range of -55 °C to 150 °C.

Feature Summary

Very fast switching capability enabled by Trench MOSFET technology
Low threshold voltage for efficient drive requirements
Integrated electrostatic discharge protection up to 2 kV

Applications

Relay driver
High-speed line driver
Low-side load switch
Switching circuits

Procurement Notes

Verify the specific ordering suffix against official Nexperia documentation to confirm package variant and reel specifications. Confirm that the product status aligns with current production requirements, as automotive qualification details may vary between revisions. Ensure design-in compliance with absolute maximum ratings before finalizing procurement orders.

Selection Notes

Select this component for applications requiring compact dual N-channel solutions with low on-state resistance. The SOT666 package is suitable for space-constrained designs. Evaluate thermal performance based on the specified junction-to-ambient resistance values under intended PCB mounting conditions. Verify gate charge requirements against driver capabilities for optimal switching efficiency.

Part Context

This part belongs to the NX3008 series of dual N-channel Trench MOSFETs from Nexperia. It shares functional similarities with other variants like the NX3008NBKS but differs in packaging and specific electrical characteristics. The SOT666 package provides a distinct footprint compared to standard SC-88 or SOT-363 alternatives.